Product Datasheet Search Results:

2SK3301(2-7J1B).pdf6 Pages, 199 KB, Original
2SK3301(2-7J1B)
Toshiba America Electronic Components, Inc.
1 A, 900 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Toshiba.co.jp/2SK3301(2-7J1B)
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"140 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"20 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"2 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMIC...
1617 Bytes - 06:45:23, 06 October 2024