Product Datasheet Search Results:
6 Pages, 199 KB, Original- 2SK3301(2-7B1B)
- Toshiba America Electronic Components, Inc.
- 1 A, 900 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Toshiba.co.jp/2SK3301(2-7B1B)
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"20 W","Avalanche Energy Rating (Eas)":"140 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"20 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"2 A","Channel Type":"N-CHANNEL","FET Technol...
1617 Bytes - 13:56:09, 14 March 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK3301.pdf | 0.14 | 1 | Request |
