Product Datasheet Search Results:

2SK3301(2-7B1B).pdf6 Pages, 199 KB, Original
2SK3301(2-7B1B)
Toshiba America Electronic Components, Inc.
1 A, 900 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Toshiba.co.jp/2SK3301(2-7B1B)
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"20 W","Avalanche Energy Rating (Eas)":"140 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"20 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"2 A","Channel Type":"N-CHANNEL","FET Technol...
1617 Bytes - 08:37:24, 08 March 2025

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