Product Datasheet Search Results:

2SK2663.pdf12 Pages, 332 KB, Original
2SK2663
Shindengen Electric Manufacturing Co., Ltd.
1 A, 900 V, 14 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2663-4061.pdf1 Pages, 94 KB, Scan
2SK2663-4061
Shindengen Electric Manufacturing Co., Ltd.
1 A, 900 V, 14 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2663-4071.pdf1 Pages, 94 KB, Scan
2SK2663-4071
Shindengen Electric Manufacturing Co., Ltd.
1 A, 900 V, 14 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2663-4100.pdf1 Pages, 36 KB, Scan
2SK2663-4100
Shindengen Electric Manufacturing Co., Ltd.
1 A, 900 V, 14 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2663-4101.pdf1 Pages, 94 KB, Scan
2SK2663-4101
Shindengen Electric Manufacturing Co., Ltd.
1 A, 900 V, 14 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Shindengen.co.jp/2SK2663
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"10 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"14 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"2 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Break...
1534 Bytes - 04:50:51, 25 November 2024
Shindengen.co.jp/2SK2663-4061
{"Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Number of Elements":"1","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On Resistance-Max":"14...
1359 Bytes - 04:50:51, 25 November 2024
Shindengen.co.jp/2SK2663-4071
{"Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Number of Elements":"1","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On Resistance-Max":"14...
1363 Bytes - 04:50:51, 25 November 2024
Shindengen.co.jp/2SK2663-4100
{"Status":"DISCONTINUED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"EPACK-3","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"10 W","Package Style":"IN-LINE","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Drain Current-Max (ID)":"1 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration...
1413 Bytes - 04:50:51, 25 November 2024
Shindengen.co.jp/2SK2663-4101
{"Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Number of Elements":"1","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On Resistance-Max":"14...
1361 Bytes - 04:50:51, 25 November 2024

Documentation and Support

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