Product Datasheet Search Results:
- 2SK2177
- Shindengen Electric Manufacturing Co., Ltd.
- 1 A, 500 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET
- 2SK2177-4061
- Shindengen Electric Manufacturing Co., Ltd.
- 1 A, 500 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET
- 2SK2177-4071
- Shindengen Electric Manufacturing Co., Ltd.
- 1 A, 500 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET
- 2SK2177-4100
- Shindengen Electric Manufacturing Co., Ltd.
- 1 A, 500 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET
- 2SK2177-4101
- Shindengen Electric Manufacturing Co., Ltd.
- 1 A, 500 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Shindengen.co.jp/2SK2177
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Transistor App...
1491 Bytes - 06:26:10, 18 February 2025
Shindengen.co.jp/2SK2177-4061
{"Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Number of Elements":"1","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On Resistance-Max":"7 ...
1358 Bytes - 06:26:10, 18 February 2025
Shindengen.co.jp/2SK2177-4071
{"Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Number of Elements":"1","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On Resistance-Max":"7 ...
1361 Bytes - 06:26:10, 18 February 2025
Shindengen.co.jp/2SK2177-4100
{"Status":"DISCONTINUED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"EPACK-3","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"10 W","Package Style":"IN-LINE","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Drain Current-Max (ID)":"1 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration...
1408 Bytes - 06:26:10, 18 February 2025
Shindengen.co.jp/2SK2177-4101
{"Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Number of Elements":"1","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On Resistance-Max":"7 ...
1361 Bytes - 06:26:10, 18 February 2025