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2SK2100-01MR.pdf11 Pages, 159 KB, Scan

Product Details Search Results:

Renesas.com/2SK2109
{"Status":"DISCONTINUED","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"FLAT","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"0.5000 A","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"R...
1374 Bytes - 04:55:52, 17 November 2024
Renesas.com/2SK2109-AZ
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.5000 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transi...
1433 Bytes - 04:55:52, 17 November 2024
Renesas.com/2SK2109-T1-AZ
{"Mounting":"Surface Mount","Rad Hardened":"No","Package Type":"Power Mini-Mold","Pin Count":"3 +Tab"}...
1100 Bytes - 04:55:52, 17 November 2024
Rohm.com/2SK2102
{"C(iss) Max. (F)":"30.0p","Absolute Max. Power Diss. (W)":"200m","@V(GS) (V) (Test Condition)":"10.0","t(d)off Max. (s) Off time":"80n","r(DS)on Max. (Ohms)":"2.0","@V(DS) (V) (Test Condition)":"10.0","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"50m","V(BR)GSS (V)":"20.0","@I(D) (A) (Test Condition)":"100m","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"1.8","V(GS)th Min. (V)":".5","Package":"SIP","Military":"N","td(on) Max (s) On time delay":"15n","I(DSS) Max. (A)":"10u","@(VDS) (...
1181 Bytes - 04:55:52, 17 November 2024
Rohm.com/2SK2103
{"Terminal Finish":"TIN COPPER","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6000 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"30 V","Transis...
1398 Bytes - 04:55:52, 17 November 2024
Rohm.com/2SK2103T100
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate, 4V Drive","Product Photos":"SC-62_MPT3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.5V @ 1mA","Input Capacitance (Ciss) @ Vds":"230pF @ 10V","Series":"-","Standard Package":"1,000","Supplier Device Package":"MPT3","Datasheets":"2SK2103","Rds On (Max) @ Id, Vgs":"400 mOhm @ 1A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"500mW","Package / Case":"TO-243AA","Mounting Type":"Surf...
1571 Bytes - 04:55:52, 17 November 2024
Rohm.com/2SK2104
{"C(iss) Max. (F)":"900p","Absolute Max. Power Diss. (W)":"10.0","@V(GS) (V) (Test Condition)":"10.0","t(d)off Max. (s) Off time":"110n","r(DS)on Max. (Ohms)":".25","@V(DS) (V) (Test Condition)":"10.0","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"5.0","V(BR)GSS (V)":"20.0","@I(D) (A) (Test Condition)":"3.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.5","V(GS)th Min. (V)":"1.0","Package":"TO-221var","Military":"N","td(on) Max (s) On time delay":"10n","I(DSS) Max. (A)":"10u","@(...
1186 Bytes - 04:55:52, 17 November 2024
Rohm.com/2SK2105
{"Absolute Max. Power Diss. (W)":"20.0","Package":"TO-252var","V(BR)DSS (V)":"100","@I(D) (A) (Test Condition)":"1.0","I(D) Abs. Drain Current (A)":"2.0","Military":"N","@V(GS) (V) (Test Condition)":"10.0","r(DS)on Max. (Ohms)":".30"}...
711 Bytes - 04:55:52, 17 November 2024
Toshiba.co.jp/2SK210BL
{"@V(DS) (V) (Test Condition)":"10","C(iss) Max. (F)":"3.5p","I(G) Max. (A)":"10m","Absolute Max. Power Diss. (W)":"100m","I(DSS) Max. (A)":"24m","I(GSS) Max. (A)":"10n","I(DSS) Min. (A)":"12m","@I(D) (A) (Test Condition)":"1.0u","Package":"SC-59","Military":"N","@V(GS) (V) (Test Condition)":"1.0","V(GS)off Min. (V)":"1.2"}...
780 Bytes - 04:55:52, 17 November 2024
Toshiba.co.jp/2SK210-BL(TE85L,F)
{"Drain-Gate Voltage (Max)":"-18 V","Operating Temperature (Min)":"-55C","Continuous Drain Current":"0.024 A","Mounting":"Surface Mount","Operating Temperature (Max)":"125C","Channel Type":"N","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"SC-59","Configuration":"Single","Pin Count":"3"}...
1393 Bytes - 04:55:52, 17 November 2024
Toshiba.co.jp/2SK210GR
{"@V(DS) (V) (Test Condition)":"10","C(iss) Max. (F)":"3.5p","I(G) Max. (A)":"10m","Absolute Max. Power Diss. (W)":"100m","I(DSS) Max. (A)":"14m","I(GSS) Max. (A)":"10n","I(DSS) Min. (A)":"6.0m","@I(D) (A) (Test Condition)":"1.0u","Package":"SC-59","Military":"N","@V(GS) (V) (Test Condition)":"1.0","V(GS)off Min. (V)":"1.2"}...
781 Bytes - 04:55:52, 17 November 2024
Toshiba.co.jp/2SK210-GR(TE85L,F)
{"Drain-Gate Voltage (Max)":"-18 V","Operating Temperature (Min)":"-55C","Mounting":"Surface Mount","Operating Temperature (Max)":"125C","Channel Type":"N","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"SMini","Configuration":"Single","Pin Count":"3"}...
1351 Bytes - 04:55:52, 17 November 2024

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