Product Datasheet Search Results:

2SK2013Y.pdf3 Pages, 111 KB, Scan
2SK2013Y
Toshiba America Electronic Components, Inc.
1 A, 180 V, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Toshiba.co.jp/2SK2013Y
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"AMPLIFIER","Drain Current-Max (ID)":"1 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SIN...
1348 Bytes - 03:34:12, 06 October 2024