Product Datasheet Search Results:

2SJ78-E.pdf8 Pages, 86 KB, Original
2SJ78-E
Renesas Electronics
0.5 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, TO-220AB

Product Details Search Results:

Renesas.com/2SJ78-E
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.75 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.5000 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"180 ...
1447 Bytes - 00:22:53, 28 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
ERX12SJ7R5V.pdf0.921Request
ERG2SJ752.pdf0.921Request
ERG2SJ750H.pdf0.921Request
ERG2SJ750P.pdf0.921Request
ERG2SJ752P.pdf0.921Request
ERG2SJ751E.pdf0.921Request
ERG2SJ751V.pdf0.921Request
ERG12SJ750P.pdf0.921Request
ERG12SJ750.pdf0.921Request
ERG12SJ750U.pdf0.921Request
ERG2SJ753.pdf0.921Request
ERG2SJ753V.pdf0.921Request