Product Datasheet Search Results:
1 Pages, 73 KB, Scan- 2SJ120S
- Renesas Technology / Hitachi Semiconductor
- Silicon P-channel MOS FET
Product Details Search Results:
Hitachi.co.jp/2SJ120S
{"C(iss) Max. (F)":"150p","Absolute Max. Power Diss. (W)":"10","g(fs) Max, (S) Trans. conduct,":".25","r(DS)on Max. (Ohms)":"1.2","@V(DS) (V) (Test Condition)":"10","I(GSS) Max. (A)":"1.0u","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"1.0","@(VDS) (V) (Test Condition)":"20","Package":"TO-252var","I(DSS) Min. (A)":"1.0m","Military":"N","t(r) Max. (s) Rise time":"25n","V(BR)DSS (V)":"40","t(f) Max. (s) Fall time.":"23n","g(fs) Min. (S) Trans. conduct.":"0.1","I(D) Abs. Drain Current (A)":"2.0"}...
994 Bytes - 15:50:01, 15 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| ERG2SJ120.pdf | 0.92 | 1 | Request | |
| ERG12SJ120J.pdf | 0.92 | 1 | Request | |
| ERG2SJ120H.pdf | 0.92 | 1 | Request | |
| ERG2SJ120V.pdf | 0.92 | 1 | Request | |
| ERG2SJ120E.pdf | 0.92 | 1 | Request | |
| ERG12SJ120P.pdf | 0.92 | 1 | Request | |
| ERG12SJ120V.pdf | 0.92 | 1 | Request | |
| ERG2SJ120U.pdf | 0.92 | 1 | Request | |
| ERG12SJ120.pdf | 0.92 | 1 | Request | |
| ERG2SJ120P.pdf | 0.92 | 1 | Request | |
| ERG12SJ120E.pdf | 0.92 | 1 | Request |
