Product Datasheet Search Results:
- 2SC3416D
- On Semiconductor L.l.c.
- 0.1 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-126
- 2SC3416D-CD
- On Semiconductor L.l.c.
- 0.1 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-126
- 2SC3416D-LS
- On Semiconductor L.l.c.
- 0.1 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-126
- 2SC3416D-LT
- On Semiconductor L.l.c.
- 0.1 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-126
- 2SC3416D-RA
- On Semiconductor L.l.c.
- 0.1 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-126
- 2SC3416D-SA
- On Semiconductor L.l.c.
- 0.1 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-126
- 2SC3416D-YA
- On Semiconductor L.l.c.
- 0.1 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-126
- 2SC3416D
- Sanyo Semiconductor
- PNP/NPN Epitaxial Planar Silicon Transistors
Product Details Search Results:
Onsemi.com/2SC3416D
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Number of Terminals":"3","DC Current Gain-Min (hFE)":"60","Collector-emitter Voltage-Max":"200 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"70 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGUL...
1288 Bytes - 21:09:46, 28 November 2024
Onsemi.com/2SC3416D-CD
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"60","Collector-emitter Voltage-Max":"200 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"70 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Type":"GENERAL PU...
1338 Bytes - 21:09:46, 28 November 2024
Onsemi.com/2SC3416D-LS
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"60","Collector-emitter Voltage-Max":"200 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"70 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Type":"GENERAL PU...
1339 Bytes - 21:09:46, 28 November 2024
Onsemi.com/2SC3416D-LT
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"60","Collector-emitter Voltage-Max":"200 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"70 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Type":"GENERAL PU...
1339 Bytes - 21:09:46, 28 November 2024
Onsemi.com/2SC3416D-RA
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"60","Collector-emitter Voltage-Max":"200 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"70 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Type":"GENERAL PU...
1339 Bytes - 21:09:46, 28 November 2024
Onsemi.com/2SC3416D-SA
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"60","Collector-emitter Voltage-Max":"200 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"70 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Type":"GENERAL PU...
1337 Bytes - 21:09:46, 28 November 2024
Onsemi.com/2SC3416D-YA
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"60","Collector-emitter Voltage-Max":"200 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"70 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Type":"GENERAL PU...
1337 Bytes - 21:09:46, 28 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
2SC3405.pdf | 0.18 | 1 | Request |