Product Datasheet Search Results:
6 Pages, 152 KB, Original- 2SC2655-Y(TE6,F,M)
- Toshiba
- Bipolar Transistors - BJT NPN VCE 0.5V 900mW VCEO 50V tstg 1.0
Product Details Search Results:
Toshiba.co.jp/2SC2655-Y(TE6,F,M)
{"Emitter- Base Voltage VEBO":"5 V","Gain Bandwidth Product fT":"100 MHz","Product Category":"Bipolar Transistors - BJT","Transistor Polarity":"NPN","Minimum Operating Temperature":"- 55 C","Factory Pack Quantity":"3000","DC Collector/Base Gain hfe Min":"70","DC Current Gain hFE Max":"240","Collector-Emitter Saturation Voltage":"0.5 V","Collector- Emitter Voltage VCEO Max":"50 V","Packaging":"Tube","Collector- Base Voltage VCBO":"50 V","Mounting Style":"Through Hole","Pd - Power Dissipation":"900 mW","Packa...
1743 Bytes - 10:24:40, 15 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SC2655.pdf | 0.15 | 1 | Request |
