Product Datasheet Search Results:

2SA965-O.pdf1 Pages, 80 KB, Scan
2SA965-O
N/a
Transistor Shortform Datasheet & Cross References
2SA965-O.pdf4 Pages, 127 KB, Original
2SA965-O
Toshiba America Electronic Components, Inc.
800 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SA965-O(F).pdf4 Pages, 133 KB, Original
2SA965-O(F)
Toshiba
Trans GP BJT PNP 120V 0.8A 3-Pin TO-92 Mod
2SA965-O(TE6,F,M).pdf23 Pages, 540 KB, Original
2SA965-O(TPE6,F).pdf9 Pages, 588 KB, Original

Product Details Search Results:

Toshiba.co.jp/2SA965-O
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LEAD FREE, 2-5J1A, TO-92MOD, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.9000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"80","Collector-emitter Voltage-Max":"120 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"120 MHz","Collector Current-Max (IC)":"0.8000 A","Transistor Element Material":"SILICON","Terminal Position":...
1440 Bytes - 06:30:16, 20 November 2024
Toshiba.co.jp/2SA965-O(F)
{"Collector Current (DC) ":"0.8(A)","Transistor Polarity":"PNP","DC Current Gain":"80@100MA@5V","Collector-Emitter Voltage":"120(V)","Mounting":"Through Hole","Emitter-Base Voltage":"5(V)","Category ":"Bipolar Power","Operating Temperature Classification":"Military","Power Dissipation":"0.9(W)","Operating Temp Range":"-55C to 150C","Frequency":"120(MHz)","Package Type":"TO-92 Mod","Collector-Base Voltage":"120(V)","Rad Hardened":"No","Output Power":"Not Required(W)","Configuration":"Single","Pin Count":"3",...
1602 Bytes - 06:30:16, 20 November 2024
Toshiba.co.jp/2SA965-O(TE6,F,M)
862 Bytes - 06:30:16, 20 November 2024
Toshiba.co.jp/2SA965-O(TPE6,F)
857 Bytes - 06:30:16, 20 November 2024

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