Product Datasheet Search Results:
- 2SA1483-O
- Toshiba America Electronic Components, Inc.
- 200 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
- 2SA1483-R
- Toshiba America Electronic Components, Inc.
- 200 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
- 2SA1483-Y(TE12L,F)
- Toshiba
- Trans GP BJT PNP 45V 0.2A 1000mW 4-Pin(3+Tab) PW-Mini T/R
- 2SA1483-Y(F)
- Toshiba Semiconductor And Storage
- TRANS PNP 45V 0.2A SC-62
Product Details Search Results:
N_a/2SA1483
{"Category":"PNP Transistor, Transistor","Amps":"0.2A","MHz":"200 MHz","Volts":"60V"}...
519 Bytes - 03:52:33, 17 November 2024
Toshiba.co.jp/2SA1483
{"Terminal Finish":"NOT SPECIFIED","Transistor Polarity":"PNP","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"0.5000 W","Collector Current-Max (IC)":"0.2000 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Collector-emitter Voltage-Max":"45 V","Terminal Position":"SINGLE","Transistor Application":"SWITCHING","Surface Mount":"Yes","Case Connecti...
1472 Bytes - 03:52:33, 17 November 2024
Toshiba.co.jp/2SA1483-O
{"Terminal Finish":"NOT SPECIFIED","Transistor Polarity":"PNP","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"0.5000 W","Collector Current-Max (IC)":"0.2000 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Collector-emitter Voltage-Max":"45 V","Terminal Position":"SINGLE","Transistor Application":"SWITCHING","Surface Mount":"Yes","Case Connecti...
1486 Bytes - 03:52:33, 17 November 2024
Toshiba.co.jp/2SA1483O
{"V(CE)sat Max.(V)":".3","Absolute Max. Power Diss. (W)":"500m","V(BR)CBO (V)":"60","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"70","I(C) Abs.(A) Collector Current":"200m","h(FE) Max. Current gain.":"140","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100n","@V(CBO) (V) (Test Condition)":"45","Package":"SOT-89","f(T) Min. (Hz) Transition Freq":"100M","@V(CE) (V) (Test Condition)":"10","@I(B) (A) (Test Condition)":"10m","V(BR)CEO (V)":"45","Military":"N","@I(C) (A) (Test Co...
1012 Bytes - 03:52:33, 17 November 2024
Toshiba.co.jp/2SA1483-R
{"Terminal Finish":"NOT SPECIFIED","Transistor Polarity":"PNP","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"0.5000 W","Collector Current-Max (IC)":"0.2000 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Collector-emitter Voltage-Max":"45 V","Terminal Position":"SINGLE","Transistor Application":"SWITCHING","Surface Mount":"Yes","Case Connecti...
1483 Bytes - 03:52:33, 17 November 2024
Toshiba.co.jp/2SA1483R
{"V(CE)sat Max.(V)":".3","Absolute Max. Power Diss. (W)":"500m","V(BR)CBO (V)":"60","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"40","I(C) Abs.(A) Collector Current":"200m","h(FE) Max. Current gain.":"80","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100n","@V(CBO) (V) (Test Condition)":"45","Package":"SOT-89","f(T) Min. (Hz) Transition Freq":"100M","@V(CE) (V) (Test Condition)":"10","@I(B) (A) (Test Condition)":"10m","V(BR)CEO (V)":"45","Military":"N","@I(C) (A) (Test Con...
1011 Bytes - 03:52:33, 17 November 2024
Toshiba.co.jp/2SA1483-Y
{"Terminal Finish":"NOT SPECIFIED","Transistor Polarity":"PNP","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"0.5000 W","Collector Current-Max (IC)":"0.2000 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Collector-emitter Voltage-Max":"45 V","Terminal Position":"SINGLE","Transistor Application":"SWITCHING","Surface Mount":"Yes","Case Connecti...
1485 Bytes - 03:52:33, 17 November 2024
Toshiba.co.jp/2SA1483Y
{"V(CE)sat Max.(V)":".3","Absolute Max. Power Diss. (W)":"500m","V(BR)CBO (V)":"60","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"120","I(C) Abs.(A) Collector Current":"200m","h(FE) Max. Current gain.":"240","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100n","@V(CBO) (V) (Test Condition)":"45","Package":"SOT-89","f(T) Min. (Hz) Transition Freq":"100M","@V(CE) (V) (Test Condition)":"10","@I(B) (A) (Test Condition)":"10m","V(BR)CEO (V)":"45","Military":"N","@I(C) (A) (Test C...
1012 Bytes - 03:52:33, 17 November 2024
Toshiba.co.jp/2SA1483-Y(TE12L,F)
{"Collector Current (DC) ":"0.2(A)","Transistor Polarity":"PNP","Power Dissipation":"1(W)","Category ":"Bipolar Small Signal","Mounting":"Surface Mount","Emitter-Base Voltage":"5(V)","Operating Temp Range":"-55C to 150C","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Rad Hardened":"No","Frequency":"200(MHz)","Package Type":"PW-Mini","Collector-Base Voltage":"60(V)","DC Current Gain":"120","Output Power":"Not Required(W)","Configuration":"Single","Pin Count":"3 +Tab","Number o...
1590 Bytes - 03:52:33, 17 November 2024
Toshiba.semicon-storage.com/2SA1483-Y(F)
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"200mA","Frequency - Transition":"200MHz","Transistor Type":"PNP","Product Photos":"Pkg TA48L0xxF","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"300mV @ 10mA, 100mA","Series":"-","Package / Case":"TO-243AA","Voltage - Collector Emitter Breakdown (Max)":"45V","Power - Max":"500mW","Packaging":"Bulk","Datasheets":"2SA1483","Current - Collector Cutoff (Max)":"-","Supplier Device Package":"PW-MINI","Standard ...
1585 Bytes - 03:52:33, 17 November 2024
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