Datasheet.Directory

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2400 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","Surface Mount":"Yes...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Package / Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"250mA (Ta)","Gate Charge (Qg) @ Vgs":"0.22nC @ 4.5V","Product Photos":"SOT23","PCN Design/Specification":"Green Encapsulate 15/May/2008 Bond Wire 3/May/2011","Rds On (Max) @ Id, Vgs":"3 Ohm @ 250mA, 10V","Datasheets":"2N7002E Datasheet","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.3(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"60(V)","Pin Count":"3","Packaging":"Tape and Reel","Power Dissipation":"0.54(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOT-23","Rad Hardened":"No","Type":"Small Signal","Drain-Source On-Res":"3(ohm)","Number of Elements":"1"}...

{"Terminal Finish":"PURE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.3000 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMIC...

{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Logic Level Gate FETs","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"40pF @ 10V","Series":"-","Standard Package":"3,000","Supplier Device Package":"SOT-23-3 (TO-236)","Datasheets":"2N7002E View All Specifications","Rds On (Max) @ Id, Vgs":"3 Ohm @ 100mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)"...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.385(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Power Dissipation":"0.83(W)","Operating Temp Range":"-65C to 150C","Package Type":"SOT-23","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...

{"Terminal Finish":"TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.3850 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown V...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Related Products":"732-1114-2-ND - FIXED IND 470NH 26A 0.9 MOHM SMD 732-1114-1-ND - FIXED IND 470NH 26A 0.9 MOHM SMD 732-1114-6-ND - FIXED IND 470NH 26A 0.9 MOHM SMD 732-1122-2-ND - FIXED IND 470NH 30A 0.67 MOHM 732-1122-1-ND - FIXED IND 470NH 30A 0.67 MOHM","Package / Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"385mA (Ta)","Gate Charge (Qg) @ Vgs":"0....

{"Category":"MOSFET","Maximum Drain Source Voltage":"60 V","Description":"Value","Maximum Continuous Drain Current":"0.385 A","Package":"3TO-236AB","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b130 V","Channel Mode":"Enhancement","Operating Temperature":"-65 to 150 \u00b0C","RDS-on":"3000@10V mOhm","Manufacturer":"NXP Semiconductors"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Package / Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"260mA (Ta)","Gate Charge (Qg) @ Vgs":"0.81nC @ 5V","Product Photos":"SOT-23-3","PCN Design/Specification":"Glue Mount Process 11/July/2008 Copper Wire 26/May/2009","Rds On (Max) @ Id, Vgs":"2.5 Ohm @ 240mA, 10V","Datasheets":"2N7002E Datasheet","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"...