Product Datasheet Search Results:
- 2N6667
- Advanced Semiconductor, Inc.
- 10 A, PNP, Si, POWER TRANSISTOR, TO-220AB
- 2N6667
- American Microsemiconductor, Inc.
- 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
- 2N6667
- Boca Semiconductor
- PLASTIC MEDIUM-POWER SILICON TRANSISTORS
- 2N6667
- Central Semiconductor
- Bipolar Transistors - BJT PNP Med Power
- 2N6667LEADFREE
- Central Semiconductor Corp.
- 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
- 2N6667
- General Electric Solid State
- 10 A P-N-P darlington power transistor. -60 V. 65 W. Gain of 1000 at 5 A.
- 2N6667
- Mospec Semiconductor
- Plastic Medium-Power Silicon Transistor
- 2N6667
- Nte Electronics, Inc.
- Trans Darlington PNP 60V 10A 65000mW 3-Pin(3+Tab) TO-220
- 2N6667
- On Semiconductor
- TRANS DARL PNP 10A 60V TO220AB - 2N6667
Product Details Search Results:
Advancedsemiconductor.com/2N6667
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Terminal Form":"THROUGH-HOLE","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"1000","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"20 MHz","Collector Current-Max (IC)":"10 A","Case Connection":"COLLECTOR","Terminal Position":"SINGLE","Transistor Polarity":"PNP","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Number of Te...
1247 Bytes - 04:49:51, 17 November 2024
Americanmicrosemi.com/2N6667
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220AB, 3 PIN","Terminal Form":"THROUGH-HOLE","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"1000","Collector-emitter Voltage-Max":"60 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"20 MHz","Collector Current-Max (IC)":"10 A","Terminal Position":"SINGLE","Transistor Polarity":"PNP","Package Shape":"RECTANGULAR","Configuration":"DARLINGTON","Transistor Type":"GENERAL PURPOSE POWER...
1276 Bytes - 04:49:51, 17 November 2024
Centralsemi.com/2N6667
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"65 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"1000","Collector-emitter Voltage-Max":"60 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"20 MHz","Collector Current-Max (IC)":"10 A","Case Connection":"COLLECTOR","Terminal Position":"SINGLE","Transistor Polarity":"PNP","Pa...
1353 Bytes - 04:49:51, 17 November 2024
Centralsemi.com/2N6667LEADFREE
{"Terminal Finish":"MATTE TIN (315)","Transistor Polarity":"PNP","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"65 W","Collector Current-Max (IC)":"10 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"DARLINGTON","Transistor Type":"GENERAL PURPOSE POWER","Collector-emitter Voltage-Max":"60 V","Terminal Position":"SINGLE","Case Connection":"COLLECTOR",...
1449 Bytes - 04:49:51, 17 November 2024
N_a/2N6667
{"Category":"Transistor, Darlington Transistor","Amps":"8A","MHz":"<1 MHz","Volts":"60V"}...
534 Bytes - 04:49:51, 17 November 2024
Nte_electronics_inc_/2N6667
{"Polarity":"PNP","Collector Current (DC) ":"10(A)","Operating Temperature Classification":"Military","Mounting":"Through Hole","Emitter-Base Voltage":"5(V)","Operating Temp Range":"-65C to 150C","Power Dissipation":"65(W)","Rad Hardened":"No","Package Type":"TO-220","Collector-Base Voltage":"60(V)","DC Current Gain":"1000","Configuration":"Single","Pin Count":"3 +Tab","Number of Elements":"1"}...
1301 Bytes - 04:49:51, 17 November 2024
Nteinc.com/2N6667
779 Bytes - 04:49:51, 17 November 2024
Onsemi.com/2N6667
{"Category":"Discrete Semiconductor Products","Packaging":"Tube","Frequency - Transition":"-","Transistor Type":"PNP - Darlington","Product Photos":"TO-220-3","Family":"Transistors (BJT) - Single","Current - Collector (Ic) (Max)":"10A","Series":"-","Vce Saturation (Max) @ Ib, Ic":"3V @ 100mA, 10A","Voltage - Collector Emitter Breakdown (Max)":"60V","Power - Max":"2W","PCN Obsolescence/ EOL":"Multiple Devices 12/Apr/2006","Datasheets":"2N6667,2N6668","Current - Collector Cutoff (Max)":"1mA","Supplier Device ...
1553 Bytes - 04:49:51, 17 November 2024
Onsemi.com/2N6667BG
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220AB, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"100","Collector-emitter Voltage-Max":"60 V","Transistor Application":"AMPLIFIER","Collector Current-Max (IC)":"10 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"PNP","Package Shape":"RECTANGULAR","Confi...
1342 Bytes - 04:49:51, 17 November 2024
Onsemi.com/2N6667G
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"10A","Online Catalog":"PNP Transistors","Transistor Type":"PNP - Darlington","Frequency - Transition":"-","Product Photos":"TO-220-3","Vce Saturation (Max) @ Ib, Ic":"3V @ 100mA, 10A","Power - Max":"2W","Series":"-","Standard Package":"50","Supplier Device Package":"TO-220AB","PCN Design/Specification":"TO-220 Case Outline Update 18/Sep/2014","Packaging":"Tube","Datasheets":"2N6667,2N6668","Current - Collector Cutoff (Max)":"1mA...
1736 Bytes - 04:49:51, 17 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
7BT32N6635.pdf | 0.04 | 1 | Request | |
VLVAW2N66100AB.pdf | 4.86 | 1 | Request | |
VLVAW2N66075AB.pdf | 4.86 | 1 | Request | |
VLVAW2N66075AA.pdf | 4.86 | 1 | Request |