Datasheet.Directory

{"C(iss) Max. (F)":"50p","Absolute Max. Power Diss. (W)":"6.25","g(fs) Max, (S) Trans. conduct,":"195m","r(DS)on Max. (Ohms)":"3.0","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"30","@I(D) (A) (Test Condition)":"500m","@(VDS) (V) (Test Condition)":"30","Package":"TO-39","I(DSS) Min. (A)":"10u","Military":"Y","Mil Number":"JAN2N6660","t(r) Max. (s) Rise time":"5.0n","V(BR)DSS (V)":"60","t(f) Max. (s) Fall time.":"5.0n","g(fs) Min. (S) Trans. conduct.":"170m","I(D) Abs. Drain Cur...

{"C(iss) Max. (F)":"50p","Absolute Max. Power Diss. (W)":"6.25","g(fs) Max, (S) Trans. conduct,":"195m","r(DS)on Max. (Ohms)":"3.0","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"30","@I(D) (A) (Test Condition)":"500m","@(VDS) (V) (Test Condition)":"30","Package":"TO-39","I(DSS) Min. (A)":"10u","Military":"Y","Mil Number":"JANTX2N6660","t(r) Max. (s) Rise time":"5.0n","V(BR)DSS (V)":"60","t(f) Max. (s) Fall time.":"5.0n","g(fs) Min. (S) Trans. conduct.":"170m","I(D) Abs. Drain C...

{"C(iss) Max. (F)":"50p","Absolute Max. Power Diss. (W)":"6.25","g(fs) Max, (S) Trans. conduct,":"195m","r(DS)on Max. (Ohms)":"3.0","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"30","@I(D) (A) (Test Condition)":"500m","@(VDS) (V) (Test Condition)":"30","Package":"TO-39","I(DSS) Min. (A)":"10u","Military":"Y","Mil Number":"JANTXV2N6660","t(r) Max. (s) Rise time":"5.0n","V(BR)DSS (V)":"60","t(f) Max. (s) Fall time.":"5.0n","g(fs) Min. (S) Trans. conduct.":"170m","I(D) Abs. Drain ...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2V @ 1mA","Package / Case":"TO-205AD, TO-39-3 Metal Can","Current - Continuous Drain (Id) @ 25\u00b0C":"410mA (Ta)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"2N6660","PCN Assembly/Origin":"3L TO-39 Qualification Assembly Site Update 22/Aug/2014 Additional Fabrication Site 03/Sep/2014 Fab Site Addition 14/Aug/2014","Rds On (Max) @ Id, Vgs":"3 Ohm @ 1A, 10V","Datasheets":"2N6660","FET Type":"MOSFET N-Channel, Met...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","Case Connection":"DRAIN","Mfr ...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.7000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Surface Mount":"Yes","Mfr Pac...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HERMETIC SEALED PACKAGE-18","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"CHIP CARRIER","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Feedback Cap-Max (Crss)":"10 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE SMALL...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HERMETIC SEALED PACKAGE-18","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"CHIP CARRIER","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Feedback Cap-Max (Crss)":"10 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE SMALL...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HERMETIC SEALED PACKAGE-18","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"CHIP CARRIER","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Feedback Cap-Max (Crss)":"10 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE SMALL...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HERMETIC SEALED PACKAGE-18","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"CHIP CARRIER","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Feedback Cap-Max (Crss)":"10 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE SMALL...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HERMETIC SEALED PACKAGE-18","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"CHIP CARRIER","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Feedback Cap-Max (Crss)":"10 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE SMALL...