Product Datasheet Search Results:

2N6122.pdf5 Pages, 396 KB, Original
2N6122
Advanced Semiconductor, Inc.
Silicon Transistor Selection Guide
2N6122.pdf2 Pages, 26 KB, Original
2N6122
Boca Semiconductor
Medium Power Linear and Switching Applications
2N6122.pdf3 Pages, 112 KB, Original
2N6122
Continental Device India Limited
PLASTIC POWER TRANSISTORS, Medium Power Linear and Switching Applications
2N6122.pdf1 Pages, 34 KB, Original
2N6122
Central Semiconductor Corp.
4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2N6122LEADFREE.pdf1 Pages, 34 KB, Original
2N6122LEADFREE
Central Semiconductor Corp.
4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2N6122.pdf1 Pages, 46 KB, Original
2N6122
Crimson Semiconductor
EPITAXIAL BASE Transistor
2N6122.pdf1 Pages, 44 KB, Scan
2N6122
Fairchild Semiconductor
Full Line Condensed Catalogue 1977
2N6122.pdf1 Pages, 55 KB, Scan
2N6122
Motorola
European Master Selection Guide 1986
2N6122.pdf3 Pages, 152 KB, Scan
2N6122
General Electric Solid State
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V.
2N6122.pdf1 Pages, 63 KB, Scan
2N6122
Micro Electronics
Semiconductor Devices
2N6122.pdf4 Pages, 191 KB, Original
2N6122
Mospec Semiconductor
Complementary Silicon Plastic Power Transistor
2N6122.pdf1 Pages, 39 KB, Scan
2N6122
N/a
Shortform Data and Cross References (Misc Datasheets)

Product Details Search Results:

Centralsemi.com/2N6122
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"40 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"25","Collector-emitter Voltage-Max":"60 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"2.5 MHz","Collector Current-Max (IC)":"4 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"SING...
1384 Bytes - 03:52:08, 22 November 2024
Centralsemi.com/2N6122LEADFREE
{"Terminal Finish":"MATTE TIN (315)","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"40 W","Collector Current-Max (IC)":"4 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Collector-emitter Voltage-Max":"60 V","Transition Frequency-Nom (fT)":"2.5 MHz","Transistor Applicatio...
1482 Bytes - 03:52:08, 22 November 2024
N_a/2N6122
{"Category":"NPN Transistor, Transistor","Amps":"4A","MHz":">2.5 MHz","Volts":"60V"}...
516 Bytes - 03:52:08, 22 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
CN612216B.pdf0.121Request