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2N4339-5.pdf1 Pages, 113 KB, Scan
2N4339-5
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Semiconductor Master Cross Reference Guide

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Semelab.co.uk/2N4339-JQR
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, TO-46, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Operating Mode":"DEPLETION","Drain-source On Resistance-Max":"1700 ohm","Feedback Cap-Max (Crss)":"2 pF","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Trans...
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Semelab.co.uk/2N4339-JQR-A
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, TO-46, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Operating Mode":"DEPLETION","Drain-source On Resistance-Max":"1700 ohm","Feedback Cap-Max (Crss)":"2 pF","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Trans...
1388 Bytes - 07:49:12, 21 January 2025
Semelab.co.uk/2N4339-JQR-AG4
{"Terminal Finish":"GOLD","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"1700 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"50 V","Transistor Application":"...
1462 Bytes - 07:49:12, 21 January 2025
Semelab.co.uk/2N4339-JQR-B
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, TO-46, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Operating Mode":"DEPLETION","Drain-source On Resistance-Max":"1700 ohm","Feedback Cap-Max (Crss)":"2 pF","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Trans...
1386 Bytes - 07:49:12, 21 January 2025
Semelab.co.uk/2N4339-JQR-BG4
{"Terminal Finish":"GOLD","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"1700 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"50 V","Transistor Application":"...
1464 Bytes - 07:49:12, 21 January 2025
Semelab.co.uk/2N4339-JQRG4
{"Terminal Finish":"GOLD","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"1700 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"50 V","Transistor Application":"...
1451 Bytes - 07:49:12, 21 January 2025
Vishay.com/2N4339-2
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Voltage - Breakdown (V(BR)GSS)":"50V","Family":"JFETs (Junction Field Effect)","Current - Drain (Idss) @ Vds (Vgs=0)":"500\u00b5A @ 15V","Series":"-","Package / Case":"TO-206AA, TO-18-3 Metal Can","Supplier Device Package":"TO-206AA (TO-18)","Voltage - Cutoff (VGS off) @ Id":"600mV @ 100nA","Current Drain (Id) - Max":"-","FET Type":"N-Channel","Datasheets":"2N4338 thru 2N4341","Power - Max":"300mW","Standard Package":"20","Resistance - RDS(On...
1467 Bytes - 07:49:12, 21 January 2025
Vishay.com/2N4339-E3
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Series":"-","Voltage - Breakdown (V(BR)GSS)":"50V","Family":"JFETs (Junction Field Effect)","Current - Drain (Idss) @ Vds (Vgs=0)":"500\u00b5A @ 15V","PCN Assembly/Origin":"SIL-062-2014-Rev-0 30/May/2014","Resistance - RDS(On)":"-","Supplier Device Package":"TO-206AA (TO-18)","Voltage - Cutoff (VGS off) @ Id":"600mV @ 100nA","Power - Max":"300mW","Current Drain (Id) - Max":"-","Datasheets":"2N4338 thru 2N4341","FET Type":"N-Channel","Mounting...
1526 Bytes - 07:49:12, 21 January 2025

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