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- Microsemi Corporation
- NPN MEDIUM POWER SILICON TRANSISTOR
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{"Category":"MOSFET","Maximum Drain Source Voltage":"200 V","Typical Turn-Off Delay Time":"85(Max) ns","Description":"Value","Maximum Continuous Drain Current":"11 A","Package":"3TO-254AA","Typical Turn-On Delay Time":"35(Max) ns","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"520@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"65(Max) ns"}...
1396 Bytes - 14:58:45, 05 November 2024
Documentation and Support
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1TGE206232N4250.pdf | 0.09 | 1 | Request | |
1TGE106232N4250.pdf | 0.08 | 1 | Request | |
1TGE107232N4250.pdf | 0.08 | 1 | Request | |
1TGE106432N4250.pdf | 0.08 | 1 | Request | |
1TGE107132N4200.pdf | 0.08 | 1 | Request | |
1TGE106132N4200.pdf | 0.08 | 1 | Request | |
1TGE206132N4200.pdf | 0.08 | 1 | Request |