Product Datasheet Search Results:
1 Pages, 111 KB, Original- 2N3810A
- Advanced Semiconductor, Inc.
- 50 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-99
3 Pages, 657 KB, Original- 2N3810A
- Central Semiconductor Corp.
- 50 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78
3 Pages, 657 KB, Original- 2N3810ALEADFREE
- Central Semiconductor Corp.
- 50 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78
2 Pages, 117 KB, Scan- 2N3810A
- Intersil Corporation
- Data Book 1981
2 Pages, 91 KB, Original- 2N3810A
- Microsemi Corp.
- 50 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-99
1 Pages, 26 KB, Scan- 2N3810A
- National Semiconductor
- Pro-Electron Transistor Datasheets
1 Pages, 61 KB, Scan- 2N3810A
- Raytheon Company
- Selection Guide 1977
Product Details Search Results:
Advancedsemiconductor.com/2N3810A
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"TO-99, 8 PIN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"150","Collector-emitter Voltage-Max":"60 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"100 MHz","Collector Current-Max (IC)":"0.0500 A","Terminal Position":"BOTTOM","Transistor Polarity":"PNP","Package Shape":"ROUND","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Number of Terminals":"8"}...
1208 Bytes - 15:16:28, 13 November 2024
Calogic.net/X2N3810A
{"@I(C) (A) (Test Condition)":"1.0m","I(CBO) Max. (A)":"10u","Number of Devices":"2","Type (NPN/PNP)":"PNP","h(FE) Max. Current gain.":"450","h(FE) Min. Static Current Gain":"150","@V(CE) (V) (Test Condition)":"5.0","P(D) Max.(W) Power Dissipation":"0.6","V(BR)CEO (V)":"60","Semiconductor Material":"Silicon","@V(CBO) (V) (Test Condition)":"50","Military":"N","V(BR)CBO (V)":"60","Package":"Chip","I(C) Abs.(A) Collector Current":"50m","Emitter-Base Diode (Y/N)":"No"}...
940 Bytes - 15:16:28, 13 November 2024
Centralsemi.com/2N3810A
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL PACKAGE-6","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.6000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"125","Collector-emitter Voltage-Max":"60 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"100 MHz","Collector Current-Max (IC)":"0.0500 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Po...
1404 Bytes - 15:16:28, 13 November 2024
Centralsemi.com/2N3810ALEADFREE
{"Terminal Finish":"MATTE TIN (315)","Transistor Polarity":"PNP","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.6000 W","Collector Current-Max (IC)":"0.0500 A","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 2 ELEMENTS","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Collector-emitter Voltage-Max":"60 V","Terminal Position":"BOTTOM","Transistor Application":"A...
1501 Bytes - 15:16:28, 13 November 2024
Microsemi.com/2N3810A
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-99, 6 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.6000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"125","Collector-emitter Voltage-Max":"60 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"100 MHz","Collector Current-Max (IC)":"0.0500 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"PNP","Packa...
1355 Bytes - 15:16:28, 13 November 2024
Various/2N3810A
Dual, 2N3810A, Silicon, PNP, 600mW, 60V, 60V, 5V, 50mA, 200°C, 100MHz, 4, 150MIN, F, TO77-1...
531 Bytes - 15:16:28, 13 November 2024
Documentation and Support
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| YOKOGAWA_AF3810A3.pdf | 0.38 | 1 | Request |
