Product Datasheet Search Results:

2N3766JTXV.pdf1 Pages, 44 KB, Scan
2N3766JTXV
Motorola
Motorola Semiconductor Data & Cross Reference Book
2N3766JTXV.pdf2 Pages, 23 KB, Original

Product Details Search Results:

Microsemi.com/2N3766JANTX
{"Collector Current (DC) ":"4 A","Transistor Polarity":"NPN","Collector-Emitter Voltage":"60 V","Rad Hardened":"No","Mounting":"Through Hole","Emitter-Base Voltage":"6 V","Category ":"Bipolar Power","Operating Temperature Classification":"Military","Power Dissipation":"25 W","Operating Temp Range":"-65C to 200C","Package Type":"TO-66","Collector-Base Voltage":"80 V","DC Current Gain":"30","Pin Count":"2 +Tab","Number of Elements":"1"}...
1418 Bytes - 17:52:20, 21 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
IPI076N12N3G.pdf0.561Request
IPI147N12N3G.pdf0.751Request
IPB038N12N3G.pdf0.491Request
IFS75B12N3E4_B39.pdf0.481Request
IPP076N12N3G.pdf0.561Request
IPD110N12N3G.pdf0.751Request
IPP147N12N3G.pdf0.751Request
IPS110N12N3G.pdf0.751Request
IFS75B12N3T4_B31.pdf0.311Request
IPB036N12N3G.pdf0.621Request
IPP114N12N3G.pdf0.511Request
IFS150B12N3T4_B31.pdf0.291Request