Product Datasheet Search Results:
2 Pages, 208 KB, Original- 2N3442JAN
- Api Electronics, Inc.
- Short form transistor data
2 Pages, 23 KB, Original- 2N3442JAN
- New England Semiconductor
- NPN HIGH-POWER SILICON TRANSISTOR
2 Pages, 45 KB, Original- 2N3442JANTX
- Microsemi
- Trans GP BJT NPN 140V 10A 3-Pin(2+Tab) TO-3
2 Pages, 45 KB, Original- 2N3442JANTXV
- Microsemi Corporation
- NPN HIGH POWER SILICON TRANSISTOR
Product Details Search Results:
Microsemi.com/2N3442JANTX
{"Collector Current (DC) ":"10 A","Transistor Polarity":"NPN","Collector Current (DC) (Max)":"10 A","Collector-Emitter Voltage":"140 V","Mounting":"Through Hole","Emitter-Base Voltage":"7 V","Category ":"Bipolar Power","DC Current Gain (Min)":"20","Operating Temperature Classification":"Military","Power Dissipation":"6 W","Operating Temp Range":"-55C to 125C","Package Type":"TO-3","Collector-Base Voltage":"160 V","Rad Hardened":"No","DC Current Gain":"20","Pin Count":"2 +Tab","Number of Elements":"1"}...
1516 Bytes - 00:24:54, 15 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
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| ERNT-1JR32N34N.pdf | 28.21 | 1 | Request | |
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| 7B35J302N347G2.pdf | 0.07 | 1 | Request |
