Product Datasheet Search Results:
- 2N3036
- Advanced Semiconductor, Inc.
- 1200 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
- 2N3036
- Central Semiconductor
- Bipolar Transistors - BJT NPN
- 2N3036
- Fairchild Semiconductor Corporation
- 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
- TC52N3036ECT
- Microchip Technology, Inc.
- 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5
- TC52N3036ECTTR
- Microchip Technology, Inc.
- 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5
- 2N3036
- Micro Electronics Corporation
- 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
- 2N3036
- Raytheon Company
- Selection Guide 1977
- 2N3036
- Semelab Plc.
- 1200 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
Product Details Search Results:
Advancedsemiconductor.com/2N3036
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"TO-39, 3 PIN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"40","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"50 MHz","Collector Current-Max (IC)":"1.2 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Number of Terminals":"3","Number of Elements":"1"}...
1207 Bytes - 12:18:02, 15 November 2024
Centralsemi.com/2N3036
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"15","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.8000 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"180 ns","Turn-off Time-Max (toff)":"1200 ns","Collector-emitter Voltage-Max":"80 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"1.2 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Type":"GEN...
1339 Bytes - 12:18:02, 15 November 2024
Fairchildsemi.com/2N3036
{"Status":"ACTIVE-UNCONFIRMED","Package Body Material":"METAL","Mfr Package Description":"TO-39, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.8000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"50","Collector-emitter Voltage-Max":"80 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"50 MHz","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type...
1303 Bytes - 12:18:02, 15 November 2024
Microchip.com/TC52N3036ECT
{"Terminal Finish":"MATTE TIN","Terminal Pitch":"0.9500 mm","Terminal Form":"GULL WING","Operating Temperature-Max":"85 Cel","Supply Voltage-Nom (Vsup)":"2 V","Temperature Grade":"INDUSTRIAL","Analog IC - Other Type":"POWER SUPPLY SUPPORT CKT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Operating Temperature-Min":"-40 Cel","Package Body Material":"PLASTIC/EPOXY","Number of Channels":"2","Number of Functions":"1","EU RoHS Compliant":"Yes","Supply Voltage-Max (Vsup)":"10 V","China RoHS ...
1494 Bytes - 12:18:02, 15 November 2024
Microchip.com/TC52N3036ECTTR
{"Terminal Finish":"MATTE TIN","Terminal Pitch":"0.9500 mm","Terminal Form":"GULL WING","Operating Temperature-Max":"85 Cel","Supply Voltage-Nom (Vsup)":"2 V","Temperature Grade":"INDUSTRIAL","Analog IC - Other Type":"POWER SUPPLY SUPPORT CKT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Operating Temperature-Min":"-40 Cel","Package Body Material":"PLASTIC/EPOXY","Number of Channels":"2","Number of Functions":"1","EU RoHS Compliant":"Yes","Supply Voltage-Max (Vsup)":"10 V","China RoHS ...
1504 Bytes - 12:18:02, 15 November 2024
Microelectr.com.hk/2N3036
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"TO-39, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.8000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"50","Collector-emitter Voltage-Max":"80 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"15 MHz","Collector Current-Max (IC)":"1 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"S...
1328 Bytes - 12:18:02, 15 November 2024
N_a/2N3036
{"Category":"NPN Transistor, Transistor","Amps":"1.2A","MHz":">50 MHz","Volts":"120V"}...
518 Bytes - 12:18:02, 15 November 2024
Semelab.co.uk/2N3036
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL, TO-39, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.8000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"80 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"50 MHz","Collector Current-Max (IC)":"1.2 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"RO...
1310 Bytes - 12:18:02, 15 November 2024
Semelab.co.uk/2N3036E1
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN SILVER COPPER","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL, TO-39, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.8000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"80 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"50 MHz","Collector Current-Max (IC)":"1.2 A","EU RoHS Compliant":"Yes","Terminal Position":"BOTTOM"...
1372 Bytes - 12:18:02, 15 November 2024
Various/2N3036L
{"@I(C) (A) (Test Condition)":"10m","Absolute Max. Power Diss. (W)":"800m","I(C) Abs.(A) Collector Current":"1.2","@V(CE) (V) (Test Condition)":"10","f(T) Min. (Hz) Transition Freq":"50M","V(BR)CEO (V)":"80","Package":"TO-5","h(FE) Min. Static Current Gain":"40","Military":"N"}...
725 Bytes - 12:18:02, 15 November 2024
Documentation and Support
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