Product Datasheet Search Results:

2MBI200SB-120.pdf6 Pages, 305 KB, Original
2MBI200SB-120-50.pdf6 Pages, 795 KB, Original
2MBI200SB-120-50
Fuji Electric
IGBT Array & Module Transistor, N Channel, 200 A, 2.6 V, 1.5 kW, 1.2 kV, Module

Product Details Search Results:

Fujielectric.co.jp/2MBI200SB-120
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"MODULE-7","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"450 ns","Collector-emitter Voltage-Max":"1200 V","Transistor Application":"POWER CONTROL","Turn-on Time-Nom (ton)":"350 ns","Collector Current-Max (IC)":"300 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","...
1383 Bytes - 08:13:20, 06 January 2025
Fujielectric.co.jp/2MBI200SB-120-50
{"Transistor Polarity:":"N Channel","Collector Emitter Voltage V(br)ceo:":"1.2 kV","Collector Emitter Voltage Vces:":"2.6 V","No. of Pins:":"7","DC Collector Current:":"200 A","Power Dissipation Pd:":"1.5 kW","Transistor Case Style:":"Module","Operating Temperature Max:":"150 \u00b0C","SVHC:":"To Be Advised","Transistor Type:":"IGBT Module"}...
1342 Bytes - 08:13:20, 06 January 2025

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