Product Datasheet Search Results:
- 1SS119-E
- Renesas Technology / Hitachi Semiconductor
- Diode: Silicon Epitaxial Planar Diode For High Speed Switching
- 1SS119-E
- Renesas Electronics
- 0.15 A, SILICON, SIGNAL DIODE, DO-34
Product Details Search Results:
Renesas.com/1SS119-E
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN COPPER","Package Body Material":"GLASS","Mfr Package Description":"GLASS, MHD, 2 PIN","Terminal Form":"WIRE","Package Style":"LONG FORM","Diode Element Material":"SILICON","Power Dissipation Limit-Max":"0.2500 W","Average Forward Current-Max":"0.1500 A","Case Connection":"ISOLATED","EU RoHS Compliant":"Yes","Terminal Position":"AXIAL","Diode Type":"SIGNAL DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"2","Reverse Rec...
1234 Bytes - 08:04:43, 28 April 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
4AT3032-1SS12-0FA0.pdf | 1.67 | 1 | Request | |
4AT4502-1SS10-0FA0.pdf | 1.67 | 1 | Request | |
4AT3032-1SS12-0FC0.pdf | 1.67 | 1 | Request | |
VGE1SS14A1000M.pdf | 0.02 | 1 | Request | |
VGE1SS180000.pdf | 0.02 | 1 | Request | |
VGE1SS14A600M.pdf | 0.02 | 1 | Request | |
VGE1SS181900L.pdf | 0.02 | 1 | Request | |
VGE1SS14A600L.pdf | 0.02 | 1 | Request | |
VGE1SS181900M.pdf | 0.02 | 1 | Request | |
VGE1SS181910L.pdf | 0.02 | 1 | Request | |
VGE1SS181910M.pdf | 0.02 | 1 | Request | |
VGE1SS180010.pdf | 0.02 | 1 | Request |