Product Datasheet Search Results:
- 1N5804US+JAN
- Defense Electronics Supply Center
- 2.5A Iout, 100V Vrrm Fast Recovery Rectifier
- 1N5804US+JANS
- Defense Electronics Supply Center
- 2.5A Iout, 100V Vrrm Fast Recovery Rectifier
- 1N5804US+JANTX
- Defense Electronics Supply Center
- 2.5A Iout, 100V Vrrm Fast Recovery Rectifier
- 1N5804US+JANTXV
- Defense Electronics Supply Center
- 2.5A Iout, 100V Vrrm Fast Recovery Rectifier
- 1N5804US
- Eic Semiconductor
- Rectifier Diode Switching 100V 2.5A 25ns 2-Pin DO-41
- 1N5804US
- Microchip Technology
- Rectifier Diode Switching 100V 2.5A 25ns 2-Pin A-MELF Bag
- GRP-DATA-JANS1N5804US
- Microchip Technology
- Rectifier Diode Switching 100V 2.5A 25ns 2-Pin A-MELF Waffle
- JANTX1N5804US
- Microchip Technology
- Rectifier Diode Switching 100V 2.5A 25ns 2-Pin A-MELF Bag
Product Details Search Results:
Dla.mil/1N5804US+JAN
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"35","I(O) Max.(A) Output Current":"2.5","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"100","V(RRM)(V) Rep.Pk.Rev. Voltage":"100","Package":"MELF-5.1","I(RM) Max.(A) Pk. Rev. Current":"50u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JAN1N5804US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"25n","@T...
1153 Bytes - 03:47:48, 27 December 2024
Dla.mil/1N5804US+JANS
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"35","I(O) Max.(A) Output Current":"2.5","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"100","V(RRM)(V) Rep.Pk.Rev. Voltage":"100","Package":"MELF-5.1","I(RM) Max.(A) Pk. Rev. Current":"50u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANS1N5804US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"25n","@...
1159 Bytes - 03:47:48, 27 December 2024
Dla.mil/1N5804US+JANTX
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"35","I(O) Max.(A) Output Current":"2.5","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"100","V(RRM)(V) Rep.Pk.Rev. Voltage":"100","Package":"MELF-5.1","I(RM) Max.(A) Pk. Rev. Current":"50u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANTX1N5804US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"25n","...
1165 Bytes - 03:47:48, 27 December 2024
Dla.mil/1N5804US+JANTXV
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"35","I(O) Max.(A) Output Current":"2.5","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"100","V(RRM)(V) Rep.Pk.Rev. Voltage":"100","Package":"MELF-5.1","I(RM) Max.(A) Pk. Rev. Current":"50u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANTXV1N5804US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"25n",...
1171 Bytes - 03:47:48, 27 December 2024
Eic_semiconductor/1N5804US
{"Peak Rep Rev Volt":"100(V)","Peak Non-Repetitive Surge Current":"35(A)","Rev Curr":"1(uA)","Peak Reverse Recovery Time":"25(ns)","Mounting":"Through Hole","Forward Current":"2500(mA)","Forward Voltage":"0.875(V)","Peak Reverse Current":"1(uA)","Rectifier Type":"Switching Diode","Rad Hardened":"No","Rev Recov Time":"25(ns)","Package Type":"DO-41","Maximum Forward Current":"2500(mA)","Peak Forward Voltage":"0.875(V)","Configuration":"Single","Pin Count":"2"}...
1525 Bytes - 03:47:48, 27 December 2024
Microchip.com/1N5804US
{"Peak Reverse Current":"1(uA)","Peak Non-Repetitive Surge Current":"35(A)","Peak Reverse Recovery Time":"25(ns)","Mounting":"Surface Mount","Rad Hardened":"Yes","Packaging":"Bag","Rectifier Type":"Switching Diode","Operating Temp Range":"-65C to 175C","Package Type":"A-MELF","Peak Rep Rev Volt":"100(V)","Maximum Forward Current":"2500(mA)","Peak Forward Voltage":"0.975(V)","Configuration":"Single","Pin Count":"2"}...
1480 Bytes - 03:47:48, 27 December 2024
Microchip.com/GRP-DATA-JANS1N5804US
{"Peak Rep Rev Volt":"100(V)","Peak Non-Repetitive Surge Current":"35(A)","Peak Reverse Recovery Time":"25(ns)","Mounting":"Surface Mount","Rad Hardened":"No","Packaging":"Waffle","Rectifier Type":"Switching Diode","Operating Temp Range":"-65C to 175C","Package Type":"A-MELF","Maximum Forward Current":"2500(mA)","Peak Forward Voltage":"0.975(V)","Peak Reverse Current":"1(uA)","Configuration":"Single","Pin Count":"2"}...
1532 Bytes - 03:47:48, 27 December 2024
Microchip.com/JANTX1N5804US
1079 Bytes - 03:47:48, 27 December 2024
Microchip.com/JANTX1N5804US/TR
1080 Bytes - 03:47:48, 27 December 2024
Microsemi.com/1N5804US
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Online Catalog":"Standard Diode","Current - Reverse Leakage @ Vr":"1\u00b5A @ 100V","Mounting Type":"Surface Mount","Product Photos":"1N5804US","Standard Package":"1","Series":"-","Capacitance @ Vr, F":"25pF @ 10V, 1MHz","Voltage - Forward (Vf) (Max) @ If":"875mV @ 1A","Supplier Device Package":"D-5A","Reverse Recovery Time (trr)":"25ns","Datasheets":"1N5802,04,06US,URS","Family":"Diodes, Rectifiers - Single","Operating Temperature - Junction...
1798 Bytes - 03:47:48, 27 December 2024
Microsemi.com/1N5804USE3
{"Status":"ACTIVE","Diode Type":"SIGNAL DIODE"}...
696 Bytes - 03:47:48, 27 December 2024
Microsemi.com/1N5804US+JANTX
{"Peak Rep Rev Volt":"100 V","Avg. Forward Curr (Max)":"2.5","Peak Non-Repetitive Surge Current":"35 A","Rectifier Type":"Switching Diode","Mounting":"Surface Mount","Rad Hardened":"No","Forward Voltage":"0.975 V","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 175C","Rev Recov Time":"25 ns","Package Type":"A-MELF","Rev Curr":"1 uA","Configuration":"Single","Pin Count":"2"}...
1459 Bytes - 03:47:48, 27 December 2024
Documentation and Support
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