Product Datasheet Search Results:
- 1N5802US+JAN
- Defense Electronics Supply Center
- 2.5A Iout, 50V Vrrm Fast Recovery Rectifier
- 1N5802US+JANS
- Defense Electronics Supply Center
- 2.5A Iout, 50V Vrrm Fast Recovery Rectifier
- 1N5802US+JANTX
- Defense Electronics Supply Center
- 2.5A Iout, 50V Vrrm Fast Recovery Rectifier
- 1N5802US+JANTXV
- Defense Electronics Supply Center
- 2.5A Iout, 50V Vrrm Fast Recovery Rectifier
Product Details Search Results:
Dla.mil/1N5802US+JAN
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"35","I(O) Max.(A) Output Current":"2.5","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"50","Package":"MELF-5.1","I(RM) Max.(A) Pk. Rev. Current":"50u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JAN1N5802US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"25n","@Tem...
1151 Bytes - 02:31:57, 02 April 2025
Dla.mil/1N5802US+JANS
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"35","I(O) Max.(A) Output Current":"2.5","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"50","Package":"MELF-5.1","I(RM) Max.(A) Pk. Rev. Current":"50u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANS1N5802US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"25n","@Te...
1157 Bytes - 02:31:57, 02 April 2025
Dla.mil/1N5802US+JANTX
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"35","I(O) Max.(A) Output Current":"2.5","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"50","Package":"MELF-5.1","I(RM) Max.(A) Pk. Rev. Current":"50u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANTX1N5802US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"25n","@T...
1162 Bytes - 02:31:57, 02 April 2025
Dla.mil/1N5802US+JANTXV
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"35","I(O) Max.(A) Output Current":"2.5","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"50","Package":"MELF-5.1","I(RM) Max.(A) Pk. Rev. Current":"50u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANTXV1N5802US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"25n","@...
1169 Bytes - 02:31:57, 02 April 2025
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