Product Datasheet Search Results:

1N5462C.pdf1 Pages, 34 KB, Original
1N5462C
Aeroflex / Metelics
8.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
1N5462CCO.pdf1 Pages, 45 KB, Scan
1N5462CCO
Aeroflex / Metelics
8.2 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
1N5462CO.pdf1 Pages, 45 KB, Scan
1N5462CO
Aeroflex / Metelics
8.2 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
1N5462C06.pdf2 Pages, 99 KB, Scan
1N5462C06
Alpha Industries, Inc.
30V Vrrm, 8.2pF Capacitance Varactor Diode
1N5462C12.pdf2 Pages, 99 KB, Scan
1N5462C12
Alpha Industries, Inc.
30V Vrrm, 8.2pF Capacitance Varactor Diode
1N5462C18.pdf2 Pages, 99 KB, Scan
1N5462C18
Alpha Industries, Inc.
30V Vrrm, 8.2pF Capacitance Varactor Diode
1N5462C.pdf1 Pages, 59 KB, Scan
1N5462C
Api Electronics Group
VHF-UHF BAND, 8.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
1N5462C.pdf2 Pages, 88 KB, Scan
1N5462C
Codi Semiconductor, Inc.
High Q - Up to 600 Voltage Variable Capacitors for UHF Tuning
1N5462C+JAN.pdf18 Pages, 505 KB, Scan
1N5462C+JAN
Defense Electronics Supply Center
30V Vrrm, 8.2pF Capacitance Varactor Diode
1N5462C+JANTX.pdf18 Pages, 505 KB, Scan
1N5462C+JANTX
Defense Electronics Supply Center
30V Vrrm, 8.2pF Capacitance Varactor Diode
1N5462C+JANTXV.pdf18 Pages, 505 KB, Scan
1N5462C+JANTXV
Defense Electronics Supply Center
30V Vrrm, 8.2pF Capacitance Varactor Diode
1N5462C.pdf3 Pages, 138 KB, Scan
1N5462C
Loral
JEDEC Tuning Varactors, DO-7 Glass Package

Product Details Search Results:

Aeroflex.com/1N5462C
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"2 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"8.2 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"600","Terminal Position"...
1352 Bytes - 05:50:37, 17 March 2025
Aeroflex.com/1N5462CCO
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Number of Elements":"1","Mfr Package Description":"DIE-1","Breakdown Voltage-Min":"30 V","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"2.8","Package Style":"UNCASED CHIP","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"8.2 pF","Diode Cap Tolerance":"2 %","Quality Factor-Min":"600","Terminal Position":"UPPER","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"UNSPECIFIED","Configuration":"SINGLE","Package Body Material":"UNS...
1227 Bytes - 05:50:37, 17 March 2025
Aeroflex.com/1N5462CO
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Number of Elements":"1","Mfr Package Description":"DIE-1","Breakdown Voltage-Min":"30 V","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"2.8","Package Style":"UNCASED CHIP","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"8.2 pF","Diode Cap Tolerance":"20 %","Quality Factor-Min":"600","Terminal Position":"UPPER","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"UNSPECIFIED","Configuration":"SINGLE","Package Body Material":"UN...
1224 Bytes - 05:50:37, 17 March 2025
Alphaind.com/1N5462C06
{"C1/C2 Min. Capacitance Ratio":"2.8","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"600","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"8.2p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
808 Bytes - 05:50:37, 17 March 2025
Alphaind.com/1N5462C12
{"C1/C2 Min. Capacitance Ratio":"2.8","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"600","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"8.2p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
807 Bytes - 05:50:37, 17 March 2025
Alphaind.com/1N5462C18
{"C1/C2 Min. Capacitance Ratio":"2.8","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"600","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"8.2p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
808 Bytes - 05:50:37, 17 March 2025
Apitech.com/1N5462C
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"2 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"8.2 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"...
1386 Bytes - 05:50:37, 17 March 2025
Dla.mil/1N5462C+JAN
{"C1/C2 Min. Capacitance Ratio":"2.8","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"600","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"8.2p","Military":"Y","Mil Number":"JAN1N5462C","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
858 Bytes - 05:50:37, 17 March 2025
Dla.mil/1N5462C+JANTX
{"C1/C2 Min. Capacitance Ratio":"2.8","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"600","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"8.2p","Military":"Y","Mil Number":"JANTX1N5462C","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
870 Bytes - 05:50:37, 17 March 2025
Dla.mil/1N5462C+JANTXV
{"C1/C2 Min. Capacitance Ratio":"2.8","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"600","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"8.2p","Military":"Y","Mil Number":"JANTXV1N5462C","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
876 Bytes - 05:50:37, 17 March 2025
Microsemi.com/1N5462C
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.8","Package Style":"LONG FORM","Variable Capacitance Diode Classification":"ABRUPT","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"8.2 pF","Power Dissipation Limit-Max":"0.4000 W","Diode Cap Tolerance":"2 %","Quality Factor-Min":"600","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND...
1274 Bytes - 05:50:37, 17 March 2025
Various/1N5462C
{"C1/C2 Min. Capacitance Ratio":"2.8","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"600","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"8.2p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
764 Bytes - 05:50:37, 17 March 2025

Documentation and Support

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