Datasheet.Directory

{"V(RWM) (V) Work.Pk.Rev.Voltage":"8.92","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"16.2","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"12.1","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"11","V(BR) Min.(V)Breakdown Voltage":"9.9","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"93","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"89.2","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"158","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"121","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"110","V(BR) Min.(V)Breakdown Voltage":"99","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"9.5","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"94","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"152","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"116","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"110","V(BR) Min.(V)Breakdown Voltage":"105","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"9.9","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"89.2","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"158","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"121","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"110","V(BR) Min.(V)Breakdown Voltage":"99","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"9.5","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"94","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"152","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"116","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"110","V(BR) Min.(V)Breakdown Voltage":"105","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"9.9","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"9.4","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"15.6","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"11.6","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"11","V(BR) Min.(V)Breakdown Voltage":"10.5","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"96","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"8.92","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"16.2","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"12.1","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"11","V(BR) Min.(V)Breakdown Voltage":"9.9","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"93","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"9.4","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"15.6","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"11.6","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"11","V(BR) Min.(V)Breakdown Voltage":"10.5","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"96","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"Category":"Circuit Protection","Voltage - Clamping (Max) @ Ipp":"152V","Operating Temperature":"-55\u00b0C ~ 150\u00b0C (TJ)","Voltage - Breakdown (Min)":"104.5V","Package / Case":"DO-201AA, DO-27, Axial","Type":"Zener","Product Training Modules":"ESD and ESD Suppressors","Applications":"General Purpose","Datasheets":"1.5KE-G Series","Standard Package":"1,000","Voltage - Reverse Standoff (Typ)":"94V","Unidirectional Channels":"1","Bidirectional Channels":"-","Current - Peak Pulse (10/1000\u00b5s)":"9.87A"...

{"Polarity":"Uni-Directional","Clamping Voltage":"15.6(V)","Test Current (It)":"1(mA)","Reverse Breakdown Voltage":"10.45(V)","Mounting":"Through Hole","Rad Hardened":"No","Leakage Current (Max)":"0.005(uA)","Packaging":"Ammo Pack","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"DO-201","Peak Pulse Power Dissipation":"1500(W)","Reverse Stand-off Voltage ":"9.4(V)","Pin Count":"2","Number of Elements":"1"}...

{"Status":"ACTIVE","Polarity":"UNIDIRECTIONAL","Terminal Finish":"MATTE TIN","Package Body Material":"UNSPECIFIED","Non-rep Peak Rev Power Dis-Max":"1500 W","Breakdown Voltage-Min":"99 V","Terminal Form":"WIRE","Package Style":"LONG FORM","Breakdown Voltage-Max":"121 V","Diode Element Material":"SILICON","Case Connection":"ISOLATED","EU RoHS Compliant":"Yes","Terminal Position":"AXIAL","Diode Type":"TRANS VOLTAGE SUPPRESSOR DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Technology":"AVALANCHE","Nu...

{"Polarity":"UNIDIRECTIONAL","Terminal Finish":"MATTE TIN","Breakdown Voltage-Min":"105 V","Terminal Form":"WIRE","Breakdown Voltage-Max":"116 V","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Non-rep Peak Rev Power Dis-Max":"1500 W","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Stand-off Voltage":"94 V","Power Dissipation Limit-Max":"5 W","Case Connection":"ISOLATED","Mfr Package Description":"PLASTIC PACKAGE-2","Number of Terminals":"2","Terminal Position":"AXIAL"...