Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Power Dissipation":"40(W)","Continuous Drain Current":"10(A)","Mounting":"Through Hole","Drain-Source On-Volt":"450(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-220NIS","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"45(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Power Dissipation":"65(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-220FL","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"411 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"60 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0120 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"180 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR"...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"60(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Drain-Source On-Res":"0.012(ohm)","Power Dissipation":"150(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-3PN","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3V @ 1mA","Series":"-","Standard Package":"3,000","Supplier Device Package":"TO-220SM","Datasheets":"2SK3127 Mosfets Prod Guide","Rds On (Max) @ Id, Vgs":"12 mOhm @ 25A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"65W","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Mounting Type":"Surface Mount","Drain to ...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-3P-3,TO-247-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3V @ 1mA","Series":"-","Standard Package":"50","Supplier Device Package":"TO-3P(N)","Datasheets":"2SK3128 Mosfets Prod Guide","Rds On (Max) @ Id, Vgs":"12 mOhm @ 30A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"150W","Package / Case":"TO-3P-3, SC-65-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"30...

{"C(iss) Max. (F)":"1.5n","Absolute Max. Power Diss. (W)":"125","g(fs) Max, (S) Trans. conduct,":"2.5","r(DS)on Max. (Ohms)":"670m","@V(DS) (V) (Test Condition)":"10","I(GSS) Max. (A)":"1.0u","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"6.0","@(VDS) (V) (Test Condition)":"20","Package":"TO-3","I(DSS) Min. (A)":"1.0m","Military":"N","t(r) Max. (s) Rise time":"50n","V(BR)DSS (V)":"400","t(f) Max. (s) Fall time.":"60n","g(fs) Min. (S) Trans. conduct.":"1.5","I(D) Abs. Drain Current (A)":"12"}...