Product Datasheet Search Results:
- ZC713
- Api Electronics Group
- VHF-UHF BAND, 82 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
- ZC713B
- Api Electronics Group
- VHF-UHF BAND, 82 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
- ZC713C
- Api Electronics Group
- VHF-UHF BAND, 82 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
- ZC713
- Ferranti Semiconductors
- Shortform Data Book 1971
- ZC713
- Lucas Semiconductors
- 13V, 100Wt General purpose voltage reference/regulator diode
- ZC713
- Msi Electronics, Inc.
- 30V Vrrm, 82pF Capacitance Varactor Diode
- ZC713B
- Msi Electronics, Inc.
- 30V Vrrm, 82pF Capacitance Varactor Diode
- ZC713C
- Msi Electronics, Inc.
- 30V Vrrm, 82pF Capacitance Varactor Diode
Product Details Search Results:
Apitech.com/ZC713
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"82 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"...
1382 Bytes - 19:41:00, 06 October 2024
Apitech.com/ZC713B
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"82 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"1...
1385 Bytes - 19:41:00, 06 October 2024
Apitech.com/ZC713C
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"2 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"82 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"1...
1385 Bytes - 19:41:00, 06 October 2024
Various/ZC713
{"C1\/C2 Min. Capacitance Ratio":"2.8","Z(z) Max. (Ohms) Dyn. Imped.":".13","Tolerance (%)":"5","P(D) Max.(W) Power Dissipation":"100","@I(Z) (A) (Test Condition)":"2.0","Military":"N","@V(Q min)(V) (Test Condition)":"4","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Ct{Cj} Nom. (F) Junction Cap.":"82p","@Freq. (Hz) (Test Condition)":"50M","Package":"StR-1\/4","@V(C1) Min.(V)(Test Condition)":"2","V(Z) Nom.(V) Reference Voltage":"13","Semiconductor Material":"Silicon","Q Factor Min.":"100","@V(T){V(J)}(V)(Test Condi...
986 Bytes - 19:41:00, 06 October 2024
Various/ZC713B
{"C1\/C2 Min. Capacitance Ratio":"2.8","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"100","Package":"DO-7","P(D) Max.(W) Power Dissipation":"400m","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"82p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
831 Bytes - 19:41:00, 06 October 2024
Various/ZC713C
{"C1\/C2 Min. Capacitance Ratio":"2.8","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"100","Package":"DO-7","P(D) Max.(W) Power Dissipation":"400m","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"82p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
831 Bytes - 19:41:00, 06 October 2024