Datasheet.Directory

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Drain Current-Max (ID)":"26 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"15 V","Surface Mount":"Yes","Case Connection":"SOURCE","Mfr Package Description":"HERMET...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"2-16G1B, 3 PIN","Terminal Form":"FLAT","Package Style":"FLANGE MOUNT","Terminal Position":"DUAL","Transistor Type":"RF POWER","Package Shape":"RECTANGULAR","Number of Terminals":"2","Surface Mount":"Yes"}...

{"@V(DS) (V) (Test Condition)":"3.0","@V(DD) (V) (Test Condition)":"10","Power Gain Min. (dB)":"7.0","Semiconductor Material":"GaAs","I(DSS) Max. (A)":"26","Package":"FO-231var","V(BR)DSS (V)":"15","P(D) Max.(W) Power Dissipation":"115","@Temp (°C) (Test Condition)":"25","V(GS)off Max. (V)":"4.0","I(D) Abs. Drain Current (A)":"26","@Freq. (Hz) (Test Condition)":"5.85G","V(BR)GSS (V)":"5.0"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Drain Current-Max (ID)":"26 A","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"15 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE","Mfr Package Desc...

{"@V(DS) (V) (Test Condition)":"3.0","@V(DD) (V) (Test Condition)":"10","Power Gain Min. (dB)":"8.0","Semiconductor Material":"GaAs","I(DSS) Max. (A)":"26","Package":"SOT-469var","V(BR)DSS (V)":"15","P(D) Max.(W) Power Dissipation":"115","@Temp (°C) (Test Condition)":"25","V(GS)off Max. (V)":"1.0","I(D) Abs. Drain Current (A)":"26","@Freq. (Hz) (Test Condition)":"5.9G","V(BR)GSS (V)":"5.0"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Drain Current-Max (ID)":"20 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"15 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case ...