Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"1000pF @ 50V","Series":"MDmesh\u2122 II","Standard Package":"1","Supplier Device Package":"D2PAK","Datasheets":"STx18NM60N","Rds On (Max) @ Id, Vgs":"285 mOhm @ 6.5A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"110W","Package \/ Case":"TO-263-3, D\u00b2Pak (2 Leads + ...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"1030pF @ 50V","Series":"FDmesh\u2122 II","Standard Package":"1","Supplier Device Package":"D\u00b2PAK","Datasheets":"STx18NM60ND","Rds On (Max) @ Id, Vgs":"290 mOhm @ 6.5A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"130W","Package \/ Case":"TO-263-3, D\u00b2Pak (2 Le...

{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"350 mJ","Package Shape":"RECTANGULAR","Status":"EOL\/LIFEBUY","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"13 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2850 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"52 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60...