Product Datasheet Search Results:

S524C20D10-SI.pdf22 Pages, 102 KB, Original
S524C20D10-SI
Samsung Semiconductor Division
128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
S524C20D10-SIT.pdf22 Pages, 102 KB, Original
S524C20D10-SIT
Samsung Semiconductor Division
128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8

Product Details Search Results:

Samsung.com/S524C20D10-SI
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Operating Temperature-Max":"85 Cel","Clock Frequency-Max (fclk)":"0.1000 MHz","Number of Words Code":"128","Write Cycle Time-Max (tWC)":"10 ms","Supply Voltage-Nom (Vsup)":"3.3 V","Temperature Grade":"INDUSTRIAL","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"-40 Cel","Number of Words":"128 words","Package Body Material":"PLASTIC\/EPOXY","Number of Functions":"1","Memory Density":"1024 deg","Supply Voltage-Max (Vsup)":"...
1588 Bytes - 05:42:40, 05 October 2024
Samsung.com/S524C20D10-SIT
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Operating Temperature-Max":"85 Cel","Clock Frequency-Max (fclk)":"0.1000 MHz","Number of Words Code":"128","Write Cycle Time-Max (tWC)":"10 ms","Supply Voltage-Nom (Vsup)":"3.3 V","Temperature Grade":"INDUSTRIAL","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"-40 Cel","Number of Words":"128 words","Package Body Material":"PLASTIC\/EPOXY","Number of Functions":"1","Memory Density":"1024 deg","Supply Voltage-Max (Vsup)":"...
1596 Bytes - 05:42:40, 05 October 2024