Datasheet.Directory

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"11(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Rail\/Tube","Power Dissipation":"2.5(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOIC N","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"2.5(W)","Continuous Drain Current":"11(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Rail\/Tube","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOIC N","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"2.5(W)","Continuous Drain Current":"11(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOIC N","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0135 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"47 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR"...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Package \/ Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"11A (Ta)","Gate Charge (Qg) @ Vgs":"110nC @ 10V","Product Photos":"8-SOIC","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"13.5 mOhm @ 11A, 10V","Datasheets":"IRF7424GPBF","FET Type":"MOSFET P-Channel, Metal Oxide","Standard Package":"4,000","Drain t...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Package \/ Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"11A (Ta)","Gate Charge (Qg) @ Vgs":"110nC @ 10V","Product Photos":"8-SOIC","PCN Assembly\/Origin":"Alternate Assembly Site 15\/Apr\/2014 Qualification Wafer Site 29\/Sep\/2014","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds O...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Design Resources":"IRF7424TRPBF Saber Model IRF7424TRPBF Spice Model","Family":"FETs - Single","Product Photos":"8-SOIC","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"4,000","Supplier Device Package":"8-SO","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Datasheets":"IRF7424","Rds On (Max) @ Id, Vgs":"13.5 mOhm @ 11A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"T...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Package \/ Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"11A (Ta)","Gate Charge (Qg) @ Vgs":"110nC @ 10V","Product Photos":"8-SOIC","PCN Assembly\/Origin":"Alternate Assembly Site 15\/Apr\/2014 Qualification Wafer Site 29\/Sep\/2014","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds O...