Datasheet.Directory

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b18(V)","Channel Mode":"Enhancement","Power Dissipation":"2.5(W)","Continuous Drain Current":"11.5(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"12(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"900mV @ 250\u00b5A","Package \/ Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"11.5A (Tc)","Gate Charge (Qg) @ Vgs":"38nC @ 4.5V","Product Photos":"8-SOIC","PCN Assembly\/Origin":"Alternate Assembly Site 15\/Apr\/2014","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"14 mOhm @ 11.5A,...

{"Category":"MOSFET","Maximum Drain Source Voltage":"12 V","Typical Turn-Off Delay Time":"291 ns","Description":"Value","Maximum Continuous Drain Current":"11.5 A","Package":"8SOIC","Typical Turn-On Delay Time":"8.8 ns","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b18 V","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"14@4.5V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"225 ns"}...