Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"2A (Tc)","Gate Charge (Qg) @ Vgs":"12nC @ 10V","Product Photos":"TO-220-3","PCN Design\/Specification":"Passivation Material 14\/May\/2008","Product Training Modules":"High Voltage Switches for Power Processing","Rds On (Max) @ Id, Vgs":"4.7 Ohm @ 1A, 10V","Datasheets":"FQP2N60C, FQPF2N60C TO220B03 Pkg Drawing","FET Type":"M...

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b130(V)","Channel Mode":"Enhancement","Power Dissipation":"54(W)","Continuous Drain Current":"2(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"600(V)","Packaging":"Rail\/Tube","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-220","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...