Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 23\u00b5A","Package \/ Case":"8-PowerTDFN","Current - Continuous Drain (Id) @ 25\u00b0C":"50A (Tc)","Gate Charge (Qg) @ Vgs":"33nC @ 10V","Rds On (Max) @ Id, Vgs":"11 mOhm @ 50A, 10V","Product Photos":"8-PowerTDFN","PCN Other":"Multiple Changes 09\/Jul\/2014","Datasheets":"BSC110N06NS3 G","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1","Drain to Source Voltage (Vdss)":"60V","Online Catalog":"N...

{"Terminal Finish":"MATTE TIN","Terminal Form":"FLAT","Avalanche Energy Rating (Eas)":"22 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0110 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"200 A","Channel Type":"N-CHANNEL","FET Technol...

{"Product Category":"MOSFET","Series":"BSC110N06","Brand":"Infineon Technologies","Packaging":"Reel","Tradename":"OptiMOS","RoHS":"Details","Manufacturer":"Infineon"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"60 V","Typical Rise Time":"77 ns","Typical Turn-Off Delay Time":"14 ns","Description":"Value","Maximum Continuous Drain Current":"50 A","Package":"8TDSON EP","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b112 V","Typical Turn-On Delay Time":"10 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"11@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"6 ns"}...