Datasheet.Directory

{"C(iss) Max. (F)":"700n","Absolute Max. Power Diss. (W)":"20","@V(GS) (V) (Test Condition)":"10","r(DS)on Max. (Ohms)":"140m","@V(DS) (V) (Test Condition)":"10","I(DM) Max (A)(@25°C)":"20","I(GSS) Max. (A)":"10u","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"2.5","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"4.0","V(GS)th Min. (V)":"2.0","Package":"TO-251var","Military":"N","I(DSS) Max. (A)":"100u","@(VDS) (V) (Test Condition)":"10","t(r) Max. (s) Rise time":"50n","V(BR)DSS (V)":"60","...

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1000 A","Configuration":"SINGLE WITH BUILT-IN DIODE AND RESISTOR","Drain-source On Resistance-Max":"12 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...

{"Polarity":"N","Gate-Source Voltage (Max)":"10(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.1(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"20(V)","Packaging":"Tape and Reel","Power Dissipation":"0.2(W)","Operating Temp Range":"-55C to 150C","Package Type":"SMini","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1000 A","Configuration":"SINGLE WITH BUILT-IN DIODE AND RESISTOR","Drain-source On Resistance-Max":"12 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...

{"Polarity":"N","Gate-Source Voltage (Max)":"10(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.1(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"20(V)","Packaging":"Tape and Reel","Power Dissipation":"0.1(W)","Operating Temp Range":"-55C to 150C","Package Type":"USM","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1000 A","Configuration":"SINGLE WITH BUILT-IN DIODE AND RESISTOR","Drain-source On Resistance-Max":"12 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...

{"Polarity":"N","Gate-Source Voltage (Max)":"10 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.1 A","Mounting":"Surface Mount","Drain-Source On-Volt":"20 V","Pin Count":"3","Packaging":"Tape and Reel","Power Dissipation":"0.1 W","Operating Temp Range":"-55C to 150C","Package Type":"SSM","Rad Hardened":"No","Type":"Small Signal","Drain-Source On-Res":"12 ohm","Number of Elements":"1"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"20 V","Description":"Value","Maximum Continuous Drain Current":"0.1 A","Package":"3SSM","Mounting":"Surface Mount","Maximum Gate Source Voltage":"10 V","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"12000@2.5V mOhm","Manufacturer":"Toshiba"}...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"LEAD FREE, SSM, 2-2H1B, 3 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1000 W","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"0.1000 A","Transistor Application":"SWITCHING","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENE...

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1000 A","Configuration":"SINGLE WITH BUILT-IN DIODE AND RESISTOR","Drain-source On Resistance-Max":"6 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min"...

{"Polarity":"N","Gate-Source Voltage (Max)":"10 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.1 A","Mounting":"Surface Mount","Drain-Source On-Volt":"20 V","Packaging":"Tape and Reel","Power Dissipation":"0.2 W","Operating Temp Range":"-55C to 150C","Package Type":"SMini","Rad Hardened":"No","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...