Product Datasheet Search Results:
5 Pages, 23 KB, Original- 2SK1316L
- Renesas Technology / Hitachi Semiconductor
- Silicon N-Channel MOS FET
8 Pages, 123 KB, Original- 2SK1316L-E
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET
12 Pages, 77 KB, Original- 2SK1316L
- Renesas Electronics
- 8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
10 Pages, 148 KB, Original- 2SK1316L-E
- Renesas Electronics
- 8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Renesas.com/2SK1316L
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Tran...
1430 Bytes - 03:13:27, 06 October 2024
Renesas.com/2SK1316L-E
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1487 Bytes - 03:13:27, 06 October 2024
