VS-1N1183A, VS-1N2128A Series www.vishay.com Vishay Semiconductors Power Silicon Rectifier Diodes, 35 A, 40 A, 60 A DESCRIPTION/FEATURES * Low leakage current series * Good surge current capability up to 1000 A * Can be supplied to meet stringent military, aerospace, and other high reliability requirements * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DO-203AB (DO-5) PRODUCT SUMMARY IF(AV) 35 A, 40 A, 60 A Package DO-203AB (DO-5) Circuit configuration Single diode MAJOR RATINGS AND CHARACTERISTICS PARAMETER IF(AV) IFSM I2t I2t VRRM TEST CONDITIONS TC 50 Hz 60 Hz 50 Hz 60 Hz Range TJ 1N1183 35 (1) 140 (1) 480 500 (1) 1140 1040 16 100 50 to 600 (1) 1N3765 35 (1) 140 (1) 380 400 (1) 730 670 10 300 700 to 1000 (1) 1N1183A 40 (1) 150 (1) 765 800 (1) 2900 2650 41 000 50 to 600 (1) 1N2128A 60 (1) 140 (1) 860 900 (1) 3700 3400 52 500 50 to 600 (1) UNITS A C -65 to 200 -65 to 200 -65 to 200 -65 to 200 C A A2s A2s V Note (1) JEDEC(R) registered values ELECTRIC
VS-1N1183A, VS-1N2128A Series www.vishay.com Vishay Semiconductors Power Silicon Rectifier Diodes, (Stud Version), 35 A, 40 A, 60 A FEATURES * Low leakage current series * Good surge current capability up to 1000 A * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DO-5 (DO-203AB) PRIMARY CHARACTERISTICS IF(AV) 35 A, 40 A, 60 A Package DO-5 (DO-203AB) Circuit configuration Single MAJOR RATINGS AND CHARACTERISTICS PARAMETER IF(AV) IFSM I2t TEST CONDITIONS TC 1N3765 1N1183A 1N2128A 35 (1) 35 (1) 40 (1) 60 (1) A 140 (1) 140 (1) 150 (1) 140 (1) C 50 Hz 480 380 765 860 60 Hz 500 (1) 400 (1) 800 (1) 900 (1) 50 Hz 1140 730 2900 3700 60 Hz 1040 670 2650 3400 I2t VRRM 1N1183 16 100 Range TJ 50 to 600 10 300 (1) -65 to +200 700 to 1000 41 000 (1) -65 to +200 50 to 600 UNITS A A2s A2s 52 500 (1) -65 to +200 50 to 600 (1) V -65 to +200 C Note (1) JEDEC(R) registered values ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-1N1183 VS-1N1184 VS-1N1185 VS-1N1186 V
VS-1N1183A, VS-1N2128A Series www.vishay.com Vishay Semiconductors Power Silicon Rectifier Diodes, (Stud Version), 35 A, 40 A, 60 A FEATURES * Low leakage current series * Good surge current capability up to 1000 A * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DO-5 (DO-203AB) PRIMARY CHARACTERISTICS IF(AV) 35 A, 40 A, 60 A Package DO-5 (DO-203AB) Circuit configuration Single MAJOR RATINGS AND CHARACTERISTICS PARAMETER IF(AV) IFSM I2t TEST CONDITIONS TC 1N3765 1N1183A 1N2128A 35 (1) 35 (1) 40 (1) 60 (1) A 140 (1) 140 (1) 150 (1) 140 (1) C 50 Hz 480 380 765 860 60 Hz 500 (1) 400 (1) 800 (1) 900 (1) 50 Hz 1140 730 2900 3700 60 Hz 1040 670 2650 3400 I2t VRRM 1N1183 16 100 Range TJ 50 to 600 10 300 (1) -65 to +200 700 to 1000 41 000 (1) -65 to +200 50 to 600 UNITS A A2s A2s 52 500 (1) -65 to +200 50 to 600 (1) V -65 to +200 C Note (1) JEDEC(R) registered values ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-1N1183 VS-1N1184 VS-1N1185 VS-1N1186 V
VS-1N1183A, VS-1N2128A Series www.vishay.com Vishay Semiconductors Power Silicon Rectifier Diodes, (Stud Version), 35 A, 40 A, 60 A FEATURES * Low leakage current series * Good surge current capability up to 1000 A * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DO-5 (DO-203AB) PRIMARY CHARACTERISTICS IF(AV) 35 A, 40 A, 60 A Package DO-5 (DO-203AB) Circuit configuration Single MAJOR RATINGS AND CHARACTERISTICS PARAMETER IF(AV) IFSM I2t TEST CONDITIONS TC 1N3765 1N1183A 1N2128A 35 (1) 35 (1) 40 (1) 60 (1) A 140 (1) 140 (1) 150 (1) 140 (1) C 50 Hz 480 380 765 860 60 Hz 500 (1) 400 (1) 800 (1) 900 (1) 50 Hz 1140 730 2900 3700 60 Hz 1040 670 2650 3400 I2t VRRM 1N1183 16 100 Range TJ 50 to 600 10 300 (1) -65 to +200 700 to 1000 41 000 (1) -65 to +200 50 to 600 UNITS A A2s A2s 52 500 (1) -65 to +200 50 to 600 (1) V -65 to +200 C Note (1) JEDEC(R) registered values ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-1N1183 VS-1N1184 VS-1N1185 VS-1N1186 V