VS-10CTQ150S-M3, VS-10CTQ150-1-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 5 A FEATURES * 175 C TJ operation * Center tap configuration * Low forward voltage drop 2 * High frequency operation 1 * High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 1 3 D2PAK (TO-263AB) 2 TO-262AA 3 Base common cathode 2 Base common cathode 2 * Guard ring for enhanced ruggedness and long term reliability * Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C * Designed and qualified according to JEDEC(R)-JESD 47 2 1 Common 3 Anode cathode Anode 2 1 Common 3 Anode cathode Anode VS-10CTQ150S-M3 VS-10CTQ150-1-M3 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION PRIMARY CHARACTERISTICS IF(AV) 2x5A VR 150 V VF at IF 0.93 V IRM 7 mA at 125 C TJ max. 175 C EAS Package Circuit configuration 5 mJ D2PAK (TO-263AB), TO-262AA This center tap Schottky rectifier has
VS-10CTQ150S-M3, VS-10CTQ150-1-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 5 A FEATURES * 175 C TJ operation * Center tap configuration * Low forward voltage drop 2 * High frequency operation 1 * High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 1 3 D2PAK (TO-263AB) 2 TO-262AA 3 Base common cathode 2 Base common cathode 2 * Guard ring for enhanced ruggedness and long term reliability * Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C * Designed and qualified according to JEDEC(R)-JESD 47 2 1 Common 3 Anode cathode Anode 2 1 Common 3 Anode cathode Anode VS-10CTQ150S-M3 VS-10CTQ150-1-M3 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION PRIMARY CHARACTERISTICS IF(AV) 2x5A VR 150 V VF at IF 0.93 V IRM 7 mA at 125 C TJ max. 175 C EAS Package Circuit configuration 5 mJ D2PAK (TO-263AB), TO-262AA This center tap Schottky rectifier has