eak Gate Power (Tc = +80 , Tp 1.0 us) PGM 16 Watt Average Gate Power (Tc = +80 , t=8.3 ms) PG(AV) 0.35 Watt TJ -40 to +125 Tstg -40 to +150 Peak Repetitive Off- State Voltage (1) (TJ= -40 to 110 , Sine Wave, 50 to 60 Hz; Gate Open) T12M35T400B T12M35T600B T12M35T800B On-State RMS Current (TC = +70 ) Full Cycle Sine Wave 50 to 60 Hz Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ= +25 ) Preceded and followed by rated current. Circuit Fusing Consideration (t = 8.3 ms) Operating Junction Temperature Range Storage Temperature Range Notice: (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Volts REV. 0, Sep-2005,KTXC24 RATING AND CHARACTERISTIC CURVES T12M35T-B SERIES THERMAL CHARACTERISTICS Characteristic Thermal Resistance - Junction to Case - Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8" from Case for 10
I2t 41 A2s Peak Gate Power (Tc = +80 , Tp 1.0 us) PGM 16 Watt Average Gate Power (Tc = +80 , t=8.3 ms) PG(AV) 0.35 Watt TJ -40 to +125 Tstg -40 to +150 Peak Repetitive Off- State Voltage (1) (TJ= -40 to 110 , Sine Wave, 50 to 60 Hz; Gate Open) T12M35T600B T12M35T800B On-State RMS Current (TC = +70 ) Full Cycle Sine Wave 50 to 60 Hz Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ= +25 ) Preceded and followed by rated current. Circuit Fusing Consideration (t = 8.3 ms) Operating Junction Temperature Range Storage Temperature Range Notice: (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. REV. 1, Mar-2007,KTXC24 RATING AND CHARACTERISTIC CURVES T12M35T-B SERIES THERMAL CHARACTERISTICS Characteristic Thermal Resistance - Junction to Case - Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8" from Case for 10 Secon