MBR2560CT 25 A Schottky Barrier Rectifiers Features * Low Power Loss, High Efficiency * High Surge Capacity * Metal Silicon Junction, Majority Carrier Conduction * High Current Capacity, Low Forward Voltage Drop * Guard Ring for Over-Voltage Protection (OVP) 1 Applications 2 PIN1 + PIN3 CASE PIN2 3 TO-220AB * Low-Voltage, High-Frequency Inverters * Free Wheeling and Polarity Protection Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol VRRM Value Parameter 2535CT 2545CT 2550CT 2560CT Maximum Repetitive Reverse Voltage 35 45 50 60 Units V IFSM Average Rectified Forward Current .375 inch Le
MBR2560CT 25 A Schottky Barrier Rectifiers Features * Low Power Loss, High Efficiency * High Surge Capacity * Metal Silicon Junction, Majority Carrier Conduction * High Current Capacity, Low Forward Voltage Drop * Guard Ring for Over-Voltage Protection (OVP) 1 Applications 2 PIN1 + PIN3 CASE PIN2 3 TO-220AB * Low-Voltage, High-Frequency Inverters * Free Wheeling and Polarity Protection Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol VRRM Value Parameter 2535CT 2545CT 2550CT 2560CT Maximum Repetitive Reverse Voltage 35 45 50 60 Units V IFSM Average Rectified Forward Current .375 inch Le
Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. MBR2535CT - MBR2560CT 25 A Schottky Barrier Rectifiers Features * Low Power Loss, High Efficiency * High Surge Capacity * Metal Silicon Junction, Majority Carrier Conduction * High Current Capacity, Low Forward Voltage Drop * Guard Ring for Over-Voltage Protection (OVP) 1 Applications 2 PIN1 + PIN3 CASE PIN2 3 TO-220AB * Low-Voltage, High-Frequency Inverters * Free Wheeling and Polarity Protection Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The abs
PART NO. PACKING CODE QUALIFIED MBR25xxCT (Note 1) Prefix "H" C0 GREEN COMPOUND CODE PACKAGE PACKING TO-220AB 50 / Tube Suffix "G" Note 1: "xx" defines voltage from 35V (MBR2535CT) to 150V (MBR25150CT) EXAMPLE AEC-Q101 PREFERRED P/N PART NO. PACKING CODE MBR2560CT C0 MBR2560CT C0 MBR2560CT C0G MBR2560CT C0 MBR2560CTHC0 MBR2560CT QUALIFIED H GREEN COMPOUND DESCRIPTION CODE Green compound G AEC-Q101 qualified C0 RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) FIG. 2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG AVERAGE FORWARD CURRENT (A) 30 25 20 15 10 RESISTIVE OR INDUCTIVELOAD WITH HEATSINK 5 0 0 50 100 150 PEAK FORWARD SURGE CURRENT (A) FIG.1- FORWARD CURRENT DERATING CURVE 250 8.3ms Single Half Sine Wave JEDEC Method 225 200 175 150 125 100 1 10 FIG. 3- TYPICAL INSTATANEOUS FORWARD CHARACTERISTICS PER LEG 1 TJ=25 Pulse Width=300s 1% Duty Cycle 0.1 MBR2535CT-MBR2545CT MBR2550CT-MBR2560CT MBR
MBR2560CT 25 A Schottky Barrier Rectifiers Features * Low Power Loss, High Efficiency * High Surge Capacity * Metal Silicon Junction, Majority Carrier Conduction * High Current Capacity, Low Forward Voltage Drop * Guard Ring for Over-Voltage Protection (OVP) 1 Applications 2 PIN1 + PIN3 CASE PIN2 3 TO-220AB * Low-Voltage, High-Frequency Inverters * Free Wheeling and Polarity Protection Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol VRRM Value Parameter 2535CT 2545CT 2550CT 2560CT Maximum Repetitive Reverse Voltage 35 45 50 60 Units V IFSM Average Rectified Forward Current .375 inch Le
se Surge Current 2.0 us Pulse Width, f = 1.0 KHz 2001 Fairchild Semiconductor Corporation Device Units 2535CT 2545CT 2550CT 2560CT 35 45 50 60 V 24 31 35 42 V 35 45 50 60 10,000 V V/s 0.2 40 1.0 50 mA mA 0.82 0.73 0.75 0.65 - V V V V 1.0 0.5 A MBR2535CT - MBR2560CT, Rev. A1 MBR2535CT - MBR2560CT MBR2535CT - MBR2560CT (continued) Typical Characteristics Non-Repetitive Surge Current FORWARD CURRENT (A) 24 18 SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.00mm) LOAD LENGTHS 12 6 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE ( C) 175 PEAK FORWARD SURGE CURRENT (A) Forward Current Derating Curve 30 150 125 100 75 50 25 0 1 Forward Characteristics MBR2535CT-MBR2545CT REVERSE CURRENT (mA) TA = 25 C T A = 150 C 10 MBR2550CT-MBR2560CT 1 MBR2535CT-MBR2545CT 0.1 S Pulse Width = 300 2% Duty Cycle 0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE (V) 1 Typical Junction Capacitance 2000 MBR2535CT-MBR2545CT 1000 MBR2550CT-MBR2560CT 500 200 100 0.1 1 10 REVERS
MBR2560CT Features * * * * * * 0.185(4.70) 0.175(4.44) 0.412(10.5) MAX 0.055(1.40) 0.045(1.14) 0.154(3.91) 0.148(3.74) Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. 0.113(2.87) 0.27(6.86) 0.103(2.62) 0.23(5.84) 0.594(15.1) 0.587(14.9) TO-220AB 2 1 3 0.16(4.06) 0.14(3.56) 0.11(2.79) 0.10(2.54) PIN 1 + 0.56(14.22) 0.53(13.46) CASE PIN 2 PIN 3 0.037(0.94) 0.027(0.68) 0.025(0.64) 30 Ampere Schottky Barrier Rectifiers 0.105(2.67) 0.014(0.35) 0.095(2.41) Dimensions are in: inches (mm) Absolute Maximum Ratings* Symbol IO TA = 25C unless otherwise noted Parameter Value Units 30 A 30 A 150 A 2.0 16.6 60 W mW/C C/W RJA Average Rectified Current .375 " lead length @ TA = 130C Peak Repetitive Forward Current (Rated VR , Square Wave, 20 KHz) @ TA = 130C Peak Fo
MBR2560CT, MBRF2560CT, MBRB2560CT www.vishay.com Vishay General Semiconductor Dual Common Cathode Schottky Rectifier TO-220AB FEATURES ITO-220AB * Power pack * Guardring for overvoltage protection * Lower power losses, high efficiency * Low forward voltage drop 2 3 1 1 MBR2560CT PIN 1 PIN 2 PIN 3 CASE 2 * High forward surge capability 3 * High frequency operation * Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for D2PAK (TO-263AB) package) MBRF2560CT PIN 1 PIN 2 * Solder bath temperature 275 C maximum, 10 s, per JESD 22-B106 (for TO-220AB and ITO-220AB package) PIN 3 D2PAK (TO-263AB) K * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS 2 1 MBRB2560CT PIN 1 For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application. K PIN 2 HEATSINK MECHANICAL DATA Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB) Molding compound meet
MBR2560CT Green 30A SCHOTTKY BARRIER RECTIFIER Product Summary VRRM (V) IO (A) 45 45 60 60 15 30 15 30 Features and Benefits VF(MAX) (V) @ +25C 0.82 0.75 - IR(MAX) (mA) @ +25C 0.2 0.2 1.0 1.0 Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low-Voltage, High-Frequency Inverters, FreeWheeling, and Polarity Protection Applications Lead-Free Finish; RoHS Compliant (Notes 1 & 2 ) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications The MBR2545CT & MBR2560CT are designed to meet the stringent requirements of commercial applications, such as: Case: TO220AB Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Polarity Protection Diodes Re-Circulating Diodes Switching Diodes Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finis
PACKING CODE QUALIFIED MBR25xxCT (Note 1) Prefix "H" C0 GREEN COMPOUND CODE PACKAGE Suffix "G" PACKING 50 / Tube TO-220AB Note 1: "xx" defines voltage from 35V (MBR2535CT) to 150V (MBR25150CT) EXAMPLE PREFERRED P/N AEC-Q101 PART NO. PACKING CODE QUALIFIED MBR2560CT C0 MBR2560CT C0 MBR2560CT C0G MBR2560CT C0 MBR2560CTHC0 MBR2560CT H GREEN COMPOUND DESCRIPTION CODE G Green compound C0 AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) FIG. 2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG AVERAGE FORWARD CURRENT (A) 30 25 20 15 10 RESISTIVE OR INDUCTIVELOAD WITH HEATSINK 5 0 0 50 100 CASE TEMPERATURE 150 PEAK FORWARD SURGE CURRENT (A) FIG.1- FORWARD CURRENT DERATING CURVE TJ=25 Pulse Width=300us 1% Duty Cycle MBR2535CT-MBR2545CT MBR2550CT-MBR2560CT MBR2590CT-MBR25150CT 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 FORWARD VOLTAGE (V) Document NumberDS_D1308065 175 150 125 100 1 10 100
MBR2560CT-G MBRB2560CT-G MBR2560CT-1-G SENSITRON SEMICONDUCTOR Green Products Technical Data Data Sheet M2687, Rev. - MBR2560CT-G/MBRB2560CT-G/MBR2560CT-1-G SCHOTTKY RECTIFIER Applications: * Switching power supply * Converters * Free-Wheeling diodes * Reverse battery protection Features: * * * * * * 150 C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability MBR2560CT-G TO-220AB Case styles MBRB2560CT-G 2 D PAK MBR2560CT-1-G TO-262 Mechanical Dimensions: In Inches / mm TO-220AB * 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 * * World Wide Web Site - http://www.sensitron.com * E-Mail Address - sales@sensitron.com * MBR2560CT-G MBRB2560CT-G MBR2560CT-1-G SENSITRON SEMICOND
Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. MBR2535CT - MBR2560CT 25 A Schottky Barrier Rectifiers Features * Low Power Loss, High Efficiency * High Surge Capacity * Metal Silicon Junction, Majority Carrier Conduction * High Current Capacity, Low Forward Voltage Drop * Guard Ring for Over-Voltage Protection (OVP) 1 Applications 2 PIN1 + PIN3 CASE PIN2 3 TO-220AB * Low-Voltage, High-Frequency Inverters * Free Wheeling and Polarity Protection Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The abs
Reverse Current @ rated VR TA = 25C TA = 125C Peak Repetitive Reverse Surge Current 2.0 us Pulse Width, f = 1.0 KHz 2001 Fairchild Semiconductor Corporation 2545CT Units 2550CT 2560CT 0.82 0.73 0.75 0.65 - V V V V 0.2 40 1.0 50 mA mA 1.0 0.5 A MBR2535CT - MBR2560CT, Rev. C MBR2535CT - MBR2560CT MBR2535CT - MBR2560CT (continued) 30 24 18 SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.00mm) LOAD LENGTHS 12 6 0 0 25 50 75 100 125 Ambient Temperature [C] 150 175 Peak Forward Surge Current, IFSM [A] Average Rectified Forward Current, IF [A] Typical Characteristics Figure 1. Forward Current Derating Curve 125 100 75 50 25 0 1 2 5 10 20 50 Number of Cycles at 60Hz 50 MBR2535CT-MBR2545CT TA = 25 C T A = 150 C Reverse Current, IR [mA] 10 MBR2550CT-MBR2560CT 1 MBR2535CT-MBR2545CT 0.1 10 T A = 125 C MBR2550CT-MBR2560CT 1 TA = 75 C 0.1 MBR2535CT-MBR2545CT 0.01 TA = 25 C S Pulse Width = 300 2% Duty Cycle 0.01 0 0.2 0.4 0.6 0.8 Forward Volta
m) from case * Rated for reverse surge and ESD www.vishay.com 1 MBR25xxCT, MBRF25xxCT & MBRB25xxCT Series Vishay Semiconductors formerly General Semiconductor Maximum Ratings (TC = 25C unless otherwise noted) Parameter Symbol MBR2535CT MBR2545CT MBR2550CT MBR2560CT Unit Maximum repetitive peak reverse voltage VRRM 35 45 50 60 V Working peak reverse voltage VRWM 35 45 50 60 V Maximum DC blocking voltage VDC 35 45 50 60 V Maximum average forward rectified current Total device at TC = 130C Per leg IF(AV) 30 15 A Peak repetitive forward current per leg at TC = 130C (rated VR, square wave, 20 KHZ) IFRM 30 A Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) per leg IFSM 150 A Peak repetitive reverse current per leg at tp = 2s, 1KHZ IRRM Peak non-repetitive reverse energy (8/20s waveform) ERSM 25 mJ VC 25 kV dv/dt 10,000 V/s TJ -65 to +150 C TSTG -65 to +175 C VISOL 4500(1) 3500(2) 1500(3) V MBR2535CT MBR2545CT MBR2550CT MBR2560CT Unit Electros
MBR2560CT 30A SCHOTTKY BARRIER RECTIFIER POWER SEMICONDUCTOR Features * * * * * * * Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Plastic Material: UL Flammability Classification Rating 94V-0 TO-220AB L B * * * * Min Max A 14.22 15.88 B 9.65 10.67 C 2.54 3.43 D 5.84 6.86 E 6.35 G 12.70 14.73 H 2.29 2.79 C D K A 1 2 3 E G Mechanical Data * * Dim M J Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: As Marked on Body Weight: 2.24 grams (approx.) Mounting Position: Any Marking: Type Number N H H P Pin 1 Pin 2 Pin 3 Case J 0.51 1.14 K 3.53 4.09 L 3.56 4.83 M 1.14 1.40 N 0.30 0.64 P 2.03 2.92 All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25C unless otherwise specified Single phase, half wave, 60H