MBM2764-25 NMOS BK x8 MBM2764-30 NMOS 8K x8 MBM2764-30X NMOS 8K x8 MBM27C64-25 CMOS 8K x8 MBM27C64-30 CMOS 8Kx8 MBM27128-25 NMOS 16K x & MBM27128-30 NMOS MBM27256-20 MBM27256-25 MBM27256-30 MBM27C256-25 MBM27C25635 MBM27C256-45 NMOS 32K x4 NMOS 32K x8 NMOS 32K x8 CMOS 32Kx8 CMOS 32Kx8 CMOS 32Kx8 Access Time (max) 200 nS 250 nS 300 nS 300 nS 250 nS +5 250 nS 16K x8 300nS +5 200 nS 250 nS 300 nS 250 nS 300 nS 450 nS Power Supply Power Volts Active Dissi- pation Standby +5 +5 +5 +5 40 mWIMHz 550 pW 300 AS +5 40 mWIMHz 550 W +5 550 mw 550 mw 525 mW +5V 525 mW 210 mW +5V 525 mW 210 mW +5 40 mW/MHz 550 pW +5 40 mWiMHz 550 W +5 40 mWIMHz 550 W 193 mw 193 mW +5V 210 mW Package Page 28-pin 28-pin 28-pin 28-pin 28-pin 28-pin 28-pin 28-pin 28-pin 28-pin 49 49 4-16 4-16 4-22 4-22 4-22 4-29 4-29 429
ISTOR DIODE Z. DIODE FET ic Ic ic Z. DIODE Ic C-MOS 4001 BP C-MOS 4069 CD 4011 TL 082CP C-MOS 40498 TL 080 2SA564R 2SC536G WZ-052 SN74LS367N SN74LS373N SN74LS138 8253C-5 MB74LS374 25MH RM 8-332J P8031 MSM5128-15RS TC40HO32P ULN2003A TL311P HC18/U12.000MHZ MBM2764-25 1$2473 C-MOS 4001 BP C-MOS 4081B C-MOS 4013B C-MOS 4050B TLO82CP NJM-4558DD 2SA564R 2SC536G 25A798 182473 WZ-100 2SK44D BA6110 CD4066 BE SSMT2044 WZ-081 CD4051 BESYN-45 706529 706530 706939 706994 706996 800031 800032 800033 800034 800035 800036 800044 - 800049 900090 900095 900100 900105 706301 SYN-46 706529 706530 800032 800035 900090 900095 900100 900105 706301 LED LED Ic Ic Ic Ic TRANSISTOR LED DISPLAY LED DISPLAY TACT Sw PULSE SW RESISTER ic PUSH BUTTON PUSH BUTTON PUSH BUTTON PUSH BUTTON DIODE LED LED TRANSISTOR TACT SW PUSH BUTTON PUSH BUTTON PUSH BUTTON PUSH BUTTON DIODE SLR-34UR SLR-34GG SN74LS138 MB74LS175 MB74LS374 M54563P 28C16520 TLR-370 LB-402-AK KHC10011 SGFVOI1T RM 8-332J ULN2003A BLACK RED GRAY WHITE 182473 SLR-34UR S
t Low Voltage _ Vit ~0.1 +0.8 Vv Input High Voltage _ VIH 2.0 Veco +1 Vv | Output Low Voltage lo, = 2.1mMA VoL _ 0.45 Vv Output High Voltage lon = 400pA Vou 2.4 _ v AC CHARACTERISTICS (Recommended operating conditions unless otherwise noted.) MBM2764-20 | MBM2764-25 | MOM276030 7 Parameter Symbol Unit | Test Conditions Min | Max} Min} Max| Min | Max Address to Output Delay tavav| | 200] | 250] | 300 | ns | E=G=Vy to Output Delay TeLav| | 200; | 250/ | 300] ns [| E=Vit G to Output Delay TGLaV{ 10 70 10 | 100] 10 120 | ns | E=Vip Output Enable High to Output Float | TQHQZ, 0 60 0 60 0 105 ns | E=Vy_ TEHQZ Address to Output Hold TAXOQX 0 _ 0 0 _ ns |] E=G=VWj AC TEST CONDITIONS Output Load: Input Pulse levels: 0.8V to 2.2V o Input Rise and Fall Time: << 20nsec Timing Measurement Reference Levels: 1.0V and 2.0V for inputs 0.8V and 2.0V for outputs + TTL gate and C, = 100 pF OPERATION TIMING DIAGRAM ADDRESSES \t ADDRESSES KK A <_ TELQV_>] + TEHOZ > TGLOV TAXQXK 1 <+-TAVOV> a TGHOZ + LL ON __ OUTPUT HI
SUBISHE O~70} 250} 250 0 90 4.5~-5.5 100735 08 2.0 6 0.45/2. 1 2.4/0.4| 12 MSL2764K-2 MITSUBISHI O~70 | 200] 200 CG 60 4. 5~-5.5 100/35 0.8 2.0 0. 45/2.1 2.4/0.4 12 MBM2764-20 FUJITSU O~70} 200 70 0 60] 4. 75~5. 25 150/35 0.8 2.0 0, 45/2.1 2.4/0.4 12 | Ce MBM2764-25 FUJITSU O~70} 250; 100 0 90] 4. 75-5. 25 150/35 0.8 2.0 6 0. 45/2.1 2.4/0.4 12 | Ce MBM2764-30 FUJITSU O~70} 300] 150 0 130] 4. 75~-5, 25 150/35 0.8 2.0 6 0. 45/2. 1 2.4/0.4 12 | Ce MBM2764-30X FUJITSU -40~85 | 300] 300 6 130 4.5~5.5 150/35 0.8 2.0 0. 45/2. 1 2.4/4.4 MK2764J-8 MOSTEK O~70 | 450 0 5 MN2764-20 MATSUSHITA -10~-80 | 200| 200 0 60 4, 75-5. 25 150/30 0.8 2.0 6 0. 45/2. 1 2.4/0.4 12 MN2764-25 MATSUSHITA -10~-80 | 250] 250 0 904 4. 75-~5. 25 150/30 0.8 2.0 6 0. 45/2. 1 2.4/0.4 12 MN2764-30 MATSUSHITA -16-~~80 | 300] 300 0 105] 4. 75~~5. 25 150/30 0.8 2.0 6 0. 45/2. 1 2.4/0.4 12 MN2764- 45 MATSUSHITA -10~80 | 450} 450 0 130} 4. 75-~5. 25 150/30 0.8 2.0 6 0. 45/2. 1 2.4/0.4 12 MSM2764AS- 20 OKI O~70} 200] 200 0 70} 4. 75-~5. 25