put Capacitance: 35 pF Fast Switching Speed: 8 ns Low Input and Output Leakage Guaranteed Reliability Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage TO-205AD (TO-39) Device Marking Side View S 1 JAN2N6660* "S" fllxxyy 2 "S" = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code 3 G D *Note: or JANTX2N6660 JANTXV2N6660 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) _ TC = 25_C TC = 100_C Pulsed Drain Currenta Power Dissipation TA = 25_C 0.62 A 3 6.25 PD 0.725 Thermal Resistance, Junction-to-Ambientb RthJA 170 Thermal Resistance, Junction-to-Case RthJC 20 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range V 0.99 ID IDM TC = 25_C Unit W _ _C/W _C Notes a. Pulse width limited by maximum junction temperature. b. Not required by Military Spec. Document Number: 70223 S-04
sily Driven Without Buffer Displays, Memories, Transistors, etc. Fast Switching Speed: 8ns = _High-Speed Circuits Battery Operated Systems Low Input and Output Low Error Voltage Solid-State Relays Leakage TO-205AD (TO-39) Top View Device Marking Side View JAN2N6660* S" flixxyy S" = Siliconix Logo f= Factory Code 4 = Lot Traceability xxyy = Date Code Note: or JANTX2N6660 JANTXV2N6660 ABSOLUTE MAXIMUM RATINGS (T, = 25C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage Vos 60 Vv Gate-Source Voltage Vas +20 To = 25C 0.99 Continuous Drain Current (Ty = 150C} lb Te = 100C 0.62 A Pulsed Drain Current@ lbw 3 To = 25C 6.25 Power Dissipation Po Ww Ta= 25C 0.725 Thermal Resistance, Junction-to-Ambient Rinua 170 CW Thermal Resistance, Junction-to-Case Rihuc 20 Operating Junction and Storage Temperature Range Ty, Tstg 55 to 150 C Notes a. Pulse width limited by maximum junction temperature. b. Not required by Military Spec. www.vishay.com 11-130 Document Number: 70223 S-04279Rev. B, 16-
put Capacitance: 35 pF Fast Switching Speed: 8 ns Low Input and Output Leakage Guaranteed Reliability Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage TO-205AD (TO-39) Device Marking Side View S 1 JAN2N6660* "S" fllxxyy 2 "S" = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code 3 G D *Note: or JANTX2N6660 JANTXV2N6660 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) _ TC = 25_C TC = 100_C Pulsed Drain Currenta Power Dissipation TA = 25_C 0.62 A 3 6.25 PD 0.725 Thermal Resistance, Junction-to-Ambientb RthJA 170 Thermal Resistance, Junction-to-Case RthJC 20 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range V 0.99 ID IDM TC = 25_C Unit W _ _C/W _C Notes a. Pulse width limited by maximum junction temperature. b. Not required by Military Spec. Document Number: 70223 S-04
put Capacitance: 35 pF Fast Switching Speed: 8 ns Low Input and Output Leakage Guaranteed Reliability Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage TO-205AD (TO-39) Device Marking Side View S 1 JAN2N6660* "S" fllxxyy 2 "S" = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code 3 G D *Note: or JANTX2N6660 JANTXV2N6660 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) _ TC = 25_C TC = 100_C Pulsed Drain Currenta Power Dissipation TA = 25_C 0.62 A 3 6.25 PD 0.725 Thermal Resistance, Junction-to-Ambientb RthJA 170 Thermal Resistance, Junction-to-Case RthJC 20 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range V 0.99 ID IDM TC = 25_C Unit W _ _C/W _C Notes a. Pulse width limited by maximum junction temperature. b. Not required by Military Spec. Document Number: 70223 S-04
3 4 GND VL IN 10 S12 16 S21 9 IN 15 7 1 D3 12 DG405B Top View DG417B 14 13 VGND S4 VL Dual-In-Line, SOIC-8 and MSOP-8 5 12 2N6660 DG408 DG405 V- DG201B/DG202B DG301B Plastic DIP D4 S NC No connect SCREEN LEVEL DSCC NUMBER JAN JANTX JANTXV JAN JANTX JANTXV JAN2N6660 JANTX2N6660 JANTXV2N6660 JAN2N6661 JANTX2N6661 JANTXV2N6661 14 V+ NC 1 14 V+ NC 1 14 V+ NC 1 14 V+ 13 D2 D1 2 13 D2 S3 2 13 S4 S3 2 13 S4 3 12 NC NC 3 12 NC D3 3 12 D4 D3 3 12 D4 S1 4 11 S2 S1 4 11 S2 D1 4 11 D2 D1 4 11 D2 NC 5 10 NC NC 5 10 NC S1 5 10 S2 S1 5 10 S2 IN 1 6 9 IN 2 IN 6 9 NC IN1 6 9 IN2 IN1 6 9 IN2 7 8 V- GND 7 8 V- GND 7 8 V- GND 7 8 V- DG300B DG301B 2/2 Top View DG302B VL D 1 8 S2 S1 2 7 V- GND 3 6 IN V+ 4 5 VL Top View 2 Top View S IN2 5 DG419B Plastic DIP and SOIC 1 Top View 69 4 Dual-In-Line, SOIC-8 and MSOP-8 D1 GND 38 V+ Top View NC NC V+ 11 D 8 IN 10 7 V- 2 16 Top View DG417B DG418B DG419B DG303B DG302B Plastic DIP 27 D GND2 Top View DG303B VMN-PT0237-1202 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PR