H2N7000 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Description The H2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers. Absolute Maximum Ratings * Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature ................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C) ............................................................................... 400 mW * Maximum Voltages and Currents (Ta=25C) BVDSS Drain to Source Voltage......................................................................................... 60 V BVGSS Gate to Source Voltage ......................................................................................... 40 V ID Drain Current.........................................................

H2N7000 N-Channel Enhancement Mode Transistor Description The H2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers. TO-92 Absolute Maximum Ratings * Maximum Temperatures Storage Temperature.............................................................................................................................................. -55 ~ +150 C Junction Temperature ..................................................................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (TA=25C) .................................................................................................................................. 400 mW * Maximum Voltages and Currents (TA=25C) BVDSS Drain to Source Voltage .......................................................................................................................................

H2N7000 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor General Description TO-92 These products have been designed to minimize on-state resistance While provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. 1- S Features 2-G 3-D High density cell design for low Rds(on). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. Maximum RatingsTa=25 unless otherwise specified T stg ----Storage Temperature ------------------------------------------------------ -55~150 T j ----Operating Junction Temperature ---------------------------------------------- -55~150 V DSS ---- Drain-Source Voltage ---------------------------------------------------------- 60V VDGR ---- Drain-Gate Voltage (RGS1M) -----------------------------------------------

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