GBC328 PNP SILICON TRANSISTOR Description The GBC328 is designed for drive and output-stages of audio amplifiers. Features High DC Current Gain: 100~630 @VCE=-1V, IC=-100mA Complementary to GBC338 Package Dimensions D TO-92 E A S1 b1 REF. L S E A T IN G PLANE e1 e b A S1 b b1 C C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 REF. D E L e1 e Absolute Maximum Ratings (TA=25 ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (continuous) Total Device Dissipation @ TA =25 Derate above 25 Symbol VCBO VCEO VEBO IC PD Total Device Dissipation @ TC =25 Derate above 25 PD TJ, Tstg R JA R JC Operating and Storage Junction Temperature Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Electrical Characteristics (TA = 25 Symbol BVCBO BVCEO BVCES BVEBO ICBO ICES IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Cob Min. -30 -25 -30 -5 100
GBC328 Package Dimensions D TO-92 E A S1 b1 REF. L S E A T IN G PLANE e1 e b A S1 b b1 C C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 REF. D E L e1 e Absolute Maximum Ratings (TA=25 ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (continuous) Total Device Dissipation @ TA =25 Derate above 25 Symbol VCBO VCEO VEBO IC PD Total Device Dissipation @ TC =25 Derate above 25 PD TJ, Tstg R JA R JC Operating and Storage Junction Temperature Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Electrical Characteristics (TA = 25 Symbol BVCBO BVCEO BVCES BVEBO ICBO ICES IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Cob Min. 30 25 30 5 100 60 - Typ. 210 15 Ratings 30 25 5 800 625 5.0 Unit V V V mA mW mW/ 1.5 12 -55 ~ +150 200 83.3 W mW/ /W /W unless otherwise noted) Max. 100 100 100 0.7 1.2 630 - Unit V V V V nA nA nA V V MHz pF Test Condition