tWTH SuperH HD64413A TwxtWAS13tcyc0 + 15 nsMAX T1 Tw Tw Twx CKIO RD tWAS1 tWTS tWTH WAIT 2.1 2.3 HD64413A SuperH 1 SuperHCSHD64413ACS0CS1 SuperHCS 2 SuperHDMACDACK DACKHD64413ADACK DACK 3 SuperHSH-4HD64413AWAIT SH-4RDY 4 2.SuperH 2.4 HD64413A 14 1 SRES0DRES1DEN0 SuperH DMACUGM 2 H'002H'02502B 02B HD64413A Q2SD 3 GBM20 4 SRES0DRES0 SuperHUGM HD64413A DBM ginit 5. 5 2.SuperH 2.5 2.5.1 HD64413A HD64413A UGM SuperH 2.2 UGM 64M DRAM HD64413A A22A1 HD64413A UGM A1 A22 UGM SuperH UGM H'000000 HD64413A A22A1 "" 2.2 SuperH UGM H'A8000000 UGM MD3='1', MD4='0' H'A8000000 UGM ( CS1 H'A87FFFFF H'A8800000 H'A88002FF 32MB 16 H'A8FFFFFF 2.2SH7709 6 2.SuperH 2.5.2 UGM UGM 2.3 640x240 640x480 (1) FB0FB1 DSA0DSA1Y 256 UGM (2) V0V1V2 VVS V0V1V2 320x240 VSAR02UGM 16 /Y 16 X 32 UGM (3) BWAREA X MWX GBM MWX xY /8[Bytes]WASHWASL Y 16 UGM (4) DL0DL1 DL0 DL1 HD64413A SuperH DL0 DL1 DLSAHDLSAL16 (5) CU1CU2 HD64413A CU1CU2 8 / CU1CU2 2kB 7 2.SuperH 0 H'000000 960 640 0 12kB FB0 256 H'00D000 CU1 H'015000 CU2 H'07D000 V0 H'0
only the tracks you want When you select the dtsc contaaung a Delete Bank, you can play only the remauung tracks JOG CONTINUE SHUFFLE ~ If you have made a mistake while mputttng the Press the number button correspondmg to the character you want (md1cated bES1DE each number button) The cursor diSappears and the fiCst space for the DISc Memo flashes Each time you press the button, the character changes cyclically among the ones mdicated bestde the button 1---11 1:~:?->:9111 IUU0\1 ~~~JU0\\1 e3uesl 1 Characters assigned to each number button 18EN 6 The selected character lights up, and the flashing I If you have made a mistake 6 pomt you want to msert, and enter the character MEMO INPUT-f-\EDIQICBH-- ENTER Press ENTER to select the character The selected character hghts up, and the flashing cursor appears to Indicate the next space to be mput To 1nsert a character between the 1nput characters Press .... or ...,. unbl the cursur moves ni!Xt to the To Insert a space, press TRACK/SPACE once. To Input a
ilable Matte Tin X 1 260 for 10s MCC's EU RoHS and Green (Halogen Antimony Free) Parts List ES1BE-TP SMAE X 7a Available Matte Tin X 1 260 for 10s ES1CE-TP SMAE X 7a Available Matte Tin X 1 260 for 10s ES1D-TP HSMA X 7a Available Matte Tin X 1 260 for 10s ES1DE-TP SMAE X 7a Available Matte Tin X 1 260 for 10s ES1G-TP HSMA X 7a Available Matte Tin X 1 260 for 10s ES1GE-TP SMAE X 7a Available Matte Tin X 1 260 for 10s ES1J-TP HSMA X 7a Available Matte Tin X 1 260 for 10s ES1JE-TP SMAE X 7a Available Matte Tin X 1 260 for 10s ES1K-TP HSMA X 7a Available Matte Tin X 1 260 for 10s ES1KE-TP SMAE X 7a Available Matte Tin X 1 260 for 10s ES1M-TP HSMA X 7a Available Matte Tin X 1 260 for 10s ES1ME-TP SMAE X 7a Available Matte Tin X 1 260 for 10s ES2A-TP HSMA X 7a Available Matte Tin X 1 260 for 10s ES2B-TP HSMA X 7a Available Matte Tin X 1 260 for 10s ES2D-TP HSMA X 7a Available Matte Tin X 1 260 for 10s ES2G-TP HSMA X 7a Available Matte Tin X 1 260 for 10s ES2J-TP HSMA X 7a Available Matte Tin X 1 260 fo
logen free available upon request by adding suffix "-HF" Maximum Ratings x x x Operating Temperature: -50qC to +150qC Storage Temperature: -50qC to +150qC Maximum Thermal Resistance; 15qC/W Junction To Lead MCC Part Number Device Marking ES1AE ES1BE ES1CE ES1DE ES1GE ES1JE ES1KE ES1ME ES1A ES1B ES1C ES1D ES1G ES1J ES1K ES1M Maximum Recurrent Peak Reverse Voltage 50V 100V 150V 200V 400V 600V 800V 1000V Maximum RMS Voltage 35V 70V 105V 140V 280V 420V 560V 700V DO-214AC (SMAE) Maximum DC Blocking Voltage 50V 100V 150V 200V 400V 600V 800V 1000V H Cathode Band J A E Electrical Characteristics @ 25qC Unless Otherwise Specified Average Forward IF(AV) 1.0A TJ = 75qC Current Peak Forward Surge IFSM 30A 8.3ms, half sine Current Maximum Instantaneous Forward Voltage VF ES1AE-DE .975V IFM = 1.0A; ES1GE-JE 1.35V TJ = 25qC* ES1KE~ME 1.70V Maximum DC IR Reverse Current At 5PA TJ = 25qC Rated DC Blocking 100PA TJ = 100qC Voltage Maximum Reverse Recovery Time IF=0.5A, IR=1.0A, Trr 50ns ES1AE-DE 75ns ES1GE-KE Irr=
rfast Recovery Times For High Efficiency UL Flammability Maximum Ratings x x x Operating Temperature: -50qC to +150qC Storage Temperature: -50qC to +150qC Maximum Thermal Resistance; 15qC/W Junction To Lead MCC Part Number Device Marking ES1AE ES1BE ES1CE ES1DE ES1GE ES1JE ES1KE ES1ME ES1A ES1B ES1C ES1D ES1G ES1J ES1K ES1M Maximum Recurrent Peak Reverse Voltage 50V 100V 150V 200V 400V 600V 800V 1000V Maximum RMS Voltage 35V 70V 105V 140V 280V 420V 560V 700V DO-214AC (SMAE) Maximum DC Blocking Voltage 50V 100V 150V 200V 400V 600V 800V 1000V H Cathode Band J A E Electrical Characteristics @ 25qC Unless Otherwise Specified Average Forward IF(AV) 1.0A TJ = 75qC Current Peak Forward Surge IFSM 30A 8.3ms, half sine Current Maximum Instantaneous Forward Voltage VF ES1AE-DE .975V IFM = 1.0A; ES1GE-JE 1.35V TJ = 25qC* ES1KE~ME 1.70V Maximum DC IR Reverse Current At 5PA TJ = 25qC Rated DC Blocking 100PA TJ = 100qC Voltage Maximum Reverse Recovery Time IF=0.5A, IR=1.0A, Trr 50ns ES1AE-DE 75ns ES1GE-KE Irr=
p Super Fast Recovery Silicon Rectifier 50 to 1000 Volts Maximum Ratings x x x Operating Temperature: -50qC to +150qC Storage Temperature: -50qC to +150qC Maximum Thermal Resistance; 15qC/W Junction To Lead MCC Part Number Device Marking ES1AE ES1BE ES1CE ES1DE ES1GE ES1JE ES1KE ES1ME ES1A ES1B ES1C ES1D ES1G ES1J ES1K ES1M Maximum Recurrent Peak Reverse Voltage 50V 100V 150V 200V 400V 600V 800V 1000V Maximum RMS Voltage 35V 70V 105V 140V 280V 420V 560V 700V DO-214AC (SMAE) Maximum DC Blocking Voltage 50V 100V 150V 200V 400V 600V 800V 1000V H Cathode Band J A E Electrical Characteristics @ 25qC Unless Otherwise Specified Average Forward IF(AV) 1.0A TJ = 75qC Current Peak Forward Surge IFSM 30A 8.3ms, half sine Current Maximum Instantaneous Forward Voltage VF ES1AE-DE .975V IFM = 1.0A; ES1GE-JE 1.35V TJ = 25qC* ES1KE~ME 1.70V Maximum DC IR Reverse Current At 5PA TJ = 25qC Rated DC Blocking 100PA TJ = 100qC Voltage Maximum Reverse Recovery Time IF=0.5A, IR=1.0A, Trr 50ns ES1AE-DE 75ns ES1GE-KE Irr=
rfast Recovery Times For High Efficiency UL Flammability Maximum Ratings x x x Operating Temperature: -50qC to +150qC Storage Temperature: -50qC to +150qC Maximum Thermal Resistance; 15qC/W Junction To Lead MCC Part Number Device Marking ES1AE ES1BE ES1CE ES1DE ES1GE ES1JE ES1KE ES1ME ES1A ES1B ES1C ES1D ES1G ES1J ES1K ES1M Maximum Recurrent Peak Reverse Voltage 50V 100V 150V 200V 400V 600V 800V 1000V Maximum RMS Voltage 35V 70V 105V 140V 280V 420V 560V 700V DO-214AC (SMAE) Maximum DC Blocking Voltage 50V 100V 150V 200V 400V 600V 800V 1000V H Cathode Band J A E Electrical Characteristics @ 25qC Unless Otherwise Specified Average Forward IF(AV) 1.0A TJ = 75qC Current Peak Forward Surge IFSM 30A 8.3ms, half sine Current Maximum Instantaneous Forward Voltage VF ES1AE-DE .975V IFM = 1.0A; ES1GE-JE 1.35V TJ = 25qC* ES1KE~ME 1.70V Maximum DC IR Reverse Current At 5PA TJ = 25qC Rated DC Blocking 100PA TJ = 100qC Voltage Maximum Reverse Recovery Time IF=0.5A, IR=1.0A, Trr 50ns ES1AE-DE 75ns ES1GE-KE Irr=
logen free available upon request by adding suffix "-HF" Maximum Ratings x x x Operating Temperature: -50qC to +150qC Storage Temperature: -50qC to +150qC Maximum Thermal Resistance; 15qC/W Junction To Lead MCC Part Number Device Marking ES1AE ES1BE ES1CE ES1DE ES1GE ES1JE ES1KE ES1ME ES1A ES1B ES1C ES1D ES1G ES1J ES1K ES1M Maximum Recurrent Peak Reverse Voltage 50V 100V 150V 200V 400V 600V 800V 1000V Maximum RMS Voltage 35V 70V 105V 140V 280V 420V 560V 700V DO-214AC (SMAE) Maximum DC Blocking Voltage 50V 100V 150V 200V 400V 600V 800V 1000V H Cathode Band J A E Electrical Characteristics @ 25qC Unless Otherwise Specified Average Forward IF(AV) 1.0A TJ = 75qC Current Peak Forward Surge IFSM 30A 8.3ms, half sine Current Maximum Instantaneous Forward Voltage VF ES1AE-DE .975V IFM = 1.0A; ES1GE-JE 1.35V TJ = 25qC* ES1KE~ME 1.70V Maximum DC IR Reverse Current At 5PA TJ = 25qC Rated DC Blocking 100PA TJ = 100qC Voltage Maximum Reverse Recovery Time Trr IF=0.5A, IR=1.0A, ES1AE-DE 50ns ES1GE-KE 75ns Irr=
p Ultra Fast Recovery Silicon Rectifier 50 to 1000 Volts Maximum Ratings x x x Operating Temperature: -50qC to +150qC Storage Temperature: -50qC to +150qC Maximum Thermal Resistance; 15qC/W Junction To Lead MCC Part Number Device Marking ES1AE ES1BE ES1CE ES1DE ES1GE ES1JE ES1KE ES1ME ES1A ES1B ES1C ES1D ES1G ES1J ES1K ES1M Maximum Recurrent Peak Reverse Voltage 50V 100V 150V 200V 400V 600V 800V 1000V Maximum RMS Voltage 35V 70V 105V 140V 280V 420V 560V 700V DO-214AC (SMAE) Maximum DC Blocking Voltage 50V 100V 150V 200V 400V 600V 800V 1000V H Cathode Band J A E Electrical Characteristics @ 25qC Unless Otherwise Specified Average Forward IF(AV) 1.0A TJ = 75qC Current Peak Forward Surge IFSM 30A 8.3ms, half sine Current Maximum Instantaneous Forward Voltage VF ES1AE-DE .975V IFM = 1.0A; ES1GE-JE 1.35V TJ = 25qC* ES1KE~ME 1.70V Maximum DC IR Reverse Current At 5PA TJ = 25qC Rated DC Blocking 100PA TJ = 100qC Voltage Maximum Reverse Recovery Time IF=0.5A, IR=1.0A, Trr 50ns ES1AE-DE 75ns ES1GE-KE Irr=
S1A ES1B ES1D ES1G ES1J ES1K ES1M 50 100 200 400 600 800 1000 1.0 1.0 AMPERE ULTRAFAST US1A US1B US1D US1G US1J US1K US1M 50 75 100 75 200 75 400 1.0 75 600 75 800 75 1000 75 *Note: Also can be made for SMAE Package. 1.0 AMPERE ULTRAFAST ES1AE ES1BE ES1CE ES1DE ES1GE ES1JE ES1KE ES1ME 50 100 150 200 400 600 800 1000 1.0 1.0 AMPERE ULTRAFAST ER1A ER1B ER1D ER1G ER1J ER1K ER1M 50 100 200 400 600 800 1000 1.0 www.mccsemi.com 37 MCC TM Micro Commercial Components MCC Part Number Working Peak Reverse Voltage VRWM V Average Forward Current @ HalfWave Resistive Load 60Hz IO @ TL A C Forward Peak Surge Current @ 8.3mS Superimposed Maximum Reverse Current @ VRWM IFSM A IR A IFM A VFM V trr ns 100 100 100 100 100 100 100 30 30 30 30 30 30 30 10 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1 1 1 1.4 1.7 1.7 1.7 50 50 50 50 75 75 100 SMB 110 110 110 110 110 110 110 50 50 50 50 50 50 50 5.0 5.0 5.0 5.0 5.0 5.0 5.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 1.0 1.0 1.0 1.4 1.7 1.7 1.7 50 50 50 50 100 100 100 SMB 75 75 75 75
t Terminals Superfast Recovery Times For High Efficiency Maximum Ratings x x x Operating Temperature: -50qC to +150qC Storage Temperature: -50qC to +150qC Maximum Thermal Resistance; 15qC/W Junction To Lead MCC Part Number Device Marking ES1AE ES1BE ES1CE ES1DE ES1GE ES1JE ES1KE ES1ME ES1A ES1B ES1C ES1D ES1G ES1J ES1K ES1M Maximum Recurrent Peak Reverse Voltage 50V 100V 150V 200V 400V 600V 800V 1000V Maximum RMS Voltage 35V 70V 105V 140V 280V 420V 560V 700V DO-214AC (SMAE) Maximum DC Blocking Voltage 50V 100V 150V 200V 400V 600V 800V 1000V H Cathode Band J A E Electrical Characteristics @ 25qC Unless Otherwise Specified Average Forward IF(AV) 1.0A TJ = 75qC Current Peak Forward Surge IFSM 30A 8.3ms, half sine Current Maximum Instantaneous Forward Voltage VF ES1AE-DE .975V IFM = 1.0A; ES1GE-JE 1.35V TJ = 25qC* ES1KE~ME 1.70V Maximum DC IR Reverse Current At 5PA TJ = 25qC Rated DC Blocking 100PA TJ = 100qC Voltage Maximum Reverse Recovery Time IF=0.5A, IR=1.0A, Trr 50ns ES1AE-DE 75ns ES1GE-KE Irr=
2 200 50 1 5 2 0.05 US2GA SMA 2 400 50 1.4 5 2 0.05 US2JA SMA 2 600 50 1.7 5 2 0.075 US2KA SMA 2 800 50 1.7 5 2 0.075 US2MA SMA 2 1000 50 1.7 5 2 0.075 ES1AE SMAE 1 50 30 0.975 5 1 0.05 ES1BE SMAE 1 100 30 0.975 5 1 0.05 0.05 ES1CE SMAE 1 150 30 0.975 5 1 ES1DE SMAE 1 200 30 0.975 5 1 0.05 ES1GE SMAE 1 400 30 1.35 5 1 0.075 ES1JE SMAE 1 600 30 1.35 5 1 0.075 ES1KE SMAE 1 800 30 1.7 5 1 0.075 ES1ME SMAE 1 1000 30 1.7 5 1 0.1 US1AE SMAE 1 50 30 1 10 1 0.05 US1BE SMAE 1 100 30 1 10 1 0.05 US1CE SMAE 1 150 30 1 10 1 0.05 US1DE SMAE 1 200 30 1 10 1 0.05 US1GE SMAE 1 400 30 1.4 10 1 0.05 US1JE SMAE 1 600 30 1.7 10 1 0.075 US1KE SMAE 1 800 30 1.7 10 1 0.075 US1ME SMAE 1 1000 30 1.7 10 1 0.075 UF1A SMB 1 50 30 1 10 1 0.05 UF1B SMB 1 100 30 1 10 1 0.05 UF1D SMB 1 200 30 1 10 1 0.05 UF1G SMB 1 400 30 1.4 10 1 0.05 UF1J SMB 1 600 30 1.7 10 1 0.1 UF1K SMB 1 800 30 1.7 10 1 0.1 UF1M SMB 1 1000 30 1.7 10 1 0.1 ER1A-L SMB 1 50 30 0.95 5 1 0.035 ER1B-L SMB 1 100 30 0.95 5 1 0.035 ER1D-L SMB 1 200 30 0.95 5 1 0.0
rfast Recovery Times For High Efficiency UL Flammability Maximum Ratings x x x Operating Temperature: -50qC to +150qC Storage Temperature: -50qC to +150qC Maximum Thermal Resistance; 15qC/W Junction To Lead MCC Part Number Device Marking ES1AE ES1BE ES1CE ES1DE ES1GE ES1JE ES1KE ES1ME ES1A ES1B ES1C ES1D ES1G ES1J ES1K ES1M Maximum Recurrent Peak Reverse Voltage 50V 100V 150V 200V 400V 600V 800V 1000V Maximum RMS Voltage 35V 70V 105V 140V 280V 420V 560V 700V DO-214AC (SMAE) Maximum DC Blocking Voltage 50V 100V 150V 200V 400V 600V 800V 1000V H Cathode Band J A E Electrical Characteristics @ 25qC Unless Otherwise Specified Average Forward IF(AV) 1.0A TA = 75qC Current Peak Forward Surge IFSM 30A 8.3ms, half sine Current Maximum Instantaneous Forward Voltage VF IFM = 1.0A; ES1AE-DE .95V ES1GE-KE 1.35V TJ = 25qC* ES1ME 1.60V Maximum DC IR Reverse Current At 5PA TJ = 25qC Rated DC Blocking 100PA TJ = 100qC Voltage Maximum Reverse Recovery Time IF=0.5A, IR=1.0A, Trr 50ns ES1AE-DE 60ns ES1GE-KE Irr=0.25