3DD13007 1 3DD13007 NPN 4.8max 10.7max 1.4max 3.84 TO-220AB VCE0 VCB0 VEB0 IC 400 700 9 8 2 80 150 -55 150 Ptot Tj Tstg V V V A 6.9max 12.5min 2.1 Tamb= 25 - - - Ta=25 Tc=25 16.5max 2 2.54 W 2.54 0.56min B C E 2.2 Tamb= 25 - - hFE1 hFE2 - - ICB0 IEB0 VCB=700V, IE=0 VEB=9V, IC=0 hFEa VCE=5V, IC=2A hFE1/ hFE2 VCE sata VBE sata tf ts fT a: tp 300 s, hFE1 VCE=5V,IC=5mA hFE2 VCE=5V,IC=2A IC=5A, IB=1A IC=5A, IB=1A VCC=120V, IC=2A 2IB1=-IB2=0.4A VCE=10V, IC=500mA f=1MHz 1 1 8 0.75 mA mA 40 0.9 1.5 1.5 0.8 3.6 4 V V s s MHz 2% 14 0510 5800360 1 5807228-2268 2 2299 0510 3DD13007 3 () Ptot - T Ptot (W) IC (A) Tcase=25 80 1 Ptot-Tcase 60 40 0.1 20 0.01 1 hFE Ptot-Tamb 0 10 100 VCE (V) 0 100 50 T( ) VCEsat - IC hFE - IC VCEsat (V) Tamb=25 VCE=5V Tamb=25 hFE=5 1 10 0.1 1 0.01 0.1 1 IC(A) 0.01 0.1 VBEsat - IC BEsat V (V) Tamb=25 hFE=5 1.2 0.8 0.4 01 1 IC(A) 2 2 1 IC(A)
3DD13007 3DD13007 TRANSISTOR (NPN) TO-220 FEATURES Power dissipation PCM: 2 W (Tamb=25) 1. BASE Collector current ICM: 8 A Collector-base voltage 700 V V(BR)CBO: Operating and storage junction temperature range 2. COLLECTOR 3. EMITTER 123 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 1mA, IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO Ic= 10mA, IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 9 V Collector cut-off current ICBO VCB= 700V, IE=0 1 mA Emitter cut-off current IEBO VEB=9V, IC=0 100 A hFE(1) VCE= 5V, IC= 2 A 8 40 hFE(2) VCE=5 V, IC=5A 5 30 Collector-emitter saturation voltage VCE(sat) IC=2A,IB=0.4A 1 V Base-emitter saturation voltage VBE(sat) IC=2A, IB= 0.4A 1.2 V fT Ic=500mA,VCE=10V f=1MHZ Cob VCE=10,IE=0, f=0.1MHz Fall time tf Vcc=125V, Ic=5A 0.7 s Storage time ts IB1=-IB2=1A 3 s DC current gain Transition fre
3DD13007(NPN) TO-220 Transistor TO-220 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features power switching applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 8 A PC Collector Power Dissipation 2 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 1mA,IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA,IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC =0 9 V Collector cut-off current ICBO VCB= 700V, IE=0 1 mA Collector cut-off current ICEO VCE= 400V, IB=0 100 A Emitter cut-off current IEBO VEB= 9V, IC=0 100 A hFE1 VCE= 5V, IC= 2 A 8 40 hFE2 VCE=5V, IC=5A 5 30 DC current gain Collector-emitter saturation v
0 200 600 400 7 3DD13002 TO-126 BCE 1250 1000 600 400 6 3DD13002 TO-251 BCE 1250 1000 600 400 6 3DD13002,B TO-92 ECB 750 1000 600 400 6 3DD13003 TO-126 BCE 1250 1500 700 400 9 3DD13003 TO-220 BCE 2000 1500 700 400 9 3DD13005 TO-220 BCE 2000 4000 700 400 9 3DD13007 TO-220 BCE 2000 8000 700 400 9 C2611 TO-251 ECB 1000 200 600 400 7 10 10 9 9 9 8 8 10 8 10 VCE(sat) fT MAX VCE(V) IC(mA) (V) 40 20 20 70 20 20 40 10 200 40 10 200 40 10 200 40 2 500 40 2 500 40 5 1000 40 5 2000 40 20 20 IC(mA) 0.5 0.5 0.8 0.8 0.8 1 1 0.6 1.5 0.5 50 50 200 200 200 1000 1000 2000 5000 50 IB(mA) 10 10 40 40 40 250 250 500 1000 5 (MHz) 5 5 5 5 5 5 5 5 4 5
3DD13007 FEATURES Power dissipation Poy 2 2 W CTamb=25) Collector current lowe a A Collector-base voltage Verceo: TOO Operating and storage junction lamperature range Ty, Tay 850 to +150% ELECTRICAL CHARACTERISTICS (Tamb=250 TRANSISTOR ( NPN TO 220 5 i = | [ = 1.BASE ] ij POCOLLECTOR j | | ZLEMITTER 123 unless otherwise specified) Parameter Syrmbal Test conditions MIN TiF MAX UMIT Collactor-base breakdown voltage VIBRicen Io= mA, le=0 Foo Vv Collector-emitter breakdown voltage VIBRiceo lo= 10mA. p= 400 V Emitter-base breakdown voltage VIBR pn r= ImAL [e=0 a V Collector cut-off current lepo Vee= TOOV, k=D 1 rrr Emitter cut-off current lees Vee OV, iad Too uA, hee 4 Vers SV, be 2A & ao OC current gain hre iz VoesS Vi b=5A 5 30 Collector-emitter saturation voltage Vopisatl lp=24[p=0.45, 1 Vv Base-amitter saturation voltage Vor( sat] ln=2Ay, n= O44 12 yi Transition frequency ti e oe cree 4 MHe Collector oulput capacitance Cas Vee 10 Je=0, 0.1MHz 50 pF Fall time b VWoorlZ5V, [cau oF ws Storage time te
3DD13007 TRANSISTOR NPN TO--220 FEATURES Power dissipation PCM : 2 WTamb=25 Collector current ICM: 8 A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range T J T stg: -55 to +150 ELECTRICAL CHARACTERISTICSTamb=25 Parameter Symbol 1.BASE 2.COLLECTOR 123 3.EMITTER unless Test otherwise conditions specified MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 1mAIE=0 700 V Collector-emitter breakdown voltage V(BR)CEO Ic= 10m AIB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 1mAIC=0 9 V Collector cut-off current ICBO VCB= 700V IE=0 1 mA Emitter cut-off current IEBO VEB= 9 V IC=0 100 A hFE1 VCE= 5V, IC= 2 A 8 40 hFE2 VCE=5 V, IC=5A 5 30 Collector-emitter saturation voltage VCE(sat) IC=2A,IB=0.4A 1 V Base-emitter saturation voltage VBE(sat) IC=2A, IB= 0.4A 1.2 V Transition frequency fT Ic=500mA,VCE=10V f=1MH Z Collector output capacitance Cob VCE=10,I E=0f=0.1MHz Fall time tf Vcc=125V, Ic=5A Storage time ts IB1=-IB2=1A DC current gain 4 MHZ 80 pF 0.7
3DD13007 TRANSISTOR (NPN) TO-220 FEATURES power switching applications 1.BASE 2.COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) 123 3.EMITTER Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 8 A PC Collector Power Dissipation 2 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 1mA,IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA,IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC =0 9 V Collector cut-off current ICBO VCB= 700V, IE=0 1 mA Collector cut-off current ICEO VCE= 400V, IB=0 100 A Emitter cut-off current IEBO VEB= 9V, IC=0 100 A hFE1 VCE= 5V, IC= 2 A 8 40 hFE2 VCE=5V, IC=5A 5 30 DC current gain Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage
0 200 600 400 7 3DD13002 TO-126 BCE 1250 1000 600 400 6 3DD13002 TO-251 BCE 1250 1000 600 400 6 3DD13002,B TO-92 ECB 750 1000 600 400 6 3DD13003 TO-126 BCE 1250 1500 700 400 9 3DD13003 TO-220 BCE 2000 1500 700 400 9 3DD13005 TO-220 BCE 2000 4000 700 400 9 3DD13007 TO-220 BCE 2000 8000 700 400 9 C2611 TO-251 ECB 1000 200 600 400 7 10 10 9 9 9 8 8 10 8 10 VCE(sat) fT MAX VCE(V) IC(mA) (V) 40 20 20 70 20 20 40 10 200 40 10 200 40 10 200 40 2 500 40 2 500 40 5 1000 40 5 2000 40 20 20 IC(mA) 0.5 0.5 0.8 0.8 0.8 1 1 0.6 1.5 0.5 50 50 200 200 200 1000 1000 2000 5000 50 IB(mA) 10 10 40 40 40 250 250 500 1000 5 (MHz) 5 5 5 5 5 5 5 5 4 5
3DD13007 TRANSISTOR (NPN) TO-220 FEATURES Power dissipation 2 PCM: W (Tamb=25) 1. BASE Collector current 8 A ICM: Collector-base voltage 700 V V(BR)CBO: Operating and storage junction temperature range 2. COLLECTOR 3. EMITTER 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 1mA, IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO Ic= 10mA, IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 9 V Collector cut-off current ICBO VCB= 700V, IE=0 1 mA Emitter cut-off current IEBO VEB=9V, IC=0 100 A hFE(1) VCE= 5V, IC= 2 A 8 40 hFE(2) VCE=5 V, IC=5A 5 30 Collector-emitter saturation voltage VCE(sat) IC=2A,IB=0.4A 1 V Base-emitter saturation voltage VBE(sat) IC=2A, IB= 0.4A 1.2 V fT Ic=500mA,VCE=10V f=1MHZ Cob VCE=10,IE=0, f=0.1MHz Fall time tf Vcc=125V, Ic=5A 0.7 s Storage time ts IB1=-IB2=1A 3 s DC current gain Transition frequency Collector output ca