2N706A,B VcEO 15 Vde 2N7 A B Collector-Emitter Voltage(1) VCER 20 Volts 06, Collector-Base Voltage VcBO 25 Volts . Emitter-Base Voltage 2N706 VEBO 3.0 Volts (2N706 JAN AVAILABLE) oNvoce 2 CASE 22-03, STYLE 1 9 - TO-18 (TO-206AA) Collector Current 2N706,A,B Ic 50 mA Total Device Dissipation @ Ta = 25C Pp 0,3 Watt Derate above 26C 2.0 mWwrc 3 Collector Total Device Dissipation @ Tc = 25C Pp 1.0 Watts Oerate above 25C 6.67 mwrc 2 Tota! Device Dissipation @ Tc = 100C Pp 0.5 Watt Base Derate above 100C Operating and Storage Junction Tj. Tstg | 65 to +200 ces 345 U, 1 Emitter Temperature Range THERMAL CHARACTERISTICS SWITCHING TRANSISTORS Characteristic Symbo! Max Unit NPN SILICON Thermal Resistance, Junction to Case Rac 160 CW Thermal Resistance, Junction to Ambient R 500 CW 2N706A,8 JA Refer to 2N2368 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Characteristic | Symbot | Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(2) VIBRICEO 15 - Vde
L CHARACTERISTICS (At 25C unless otherwise noted) Characteristic Type Symbol | Min | Typ | Max] Unit Collector Cutoff Current I Adc (Vop = 15Vde, Ig = 0) All Types CBO - 0.005 05 | 4 (Vop = 15Vde, Ig = 0, Ta = 150 C) All Types - 3 30 (Vv. = 25Vdc, Ig = 0) 2N706A, 2N706B, ce 2N753 - - 10 Collector~Emitter Cutoff Current ICER p Adc (VCE = 20Vdc, Rpe = 100k) 2N706A, 2N706B, . 7 10 2N753 Emitter Cutoff Current IEBO pAdc (VEB = 3Vdc, Ic = 9) 2N706 - - 10 (VEB = 5Vde, Ic = 0) 2N706A, 2N706B, - - 10 2N753 Collector~Emitter Breakdown Voltage * BVCEO* Vdc ( Ie = 10mAdc,Ip = 0 All Types 15 24 - Collector-Emitter Breakdown Voltage* BVCER* Vde (R = 10 ohms, Ic = 10mAdc) All Types 20 48 - Forward-Current Transfer Ratio* hre* (le = 10mAde, VCE = 1Vde) 2N706 20 40 - 2NT06A, 2N706B, 20 40 60 2N753 40 - 120 Base-Emitter Voltage* V pe (sat)* Vde (Ie = 10mAdc, Ip = lmAdc) 2N706 - 0.75 0.9 2N706A, 2N706B, 2N753 0.7 0.75 0.9 Collector Saturation Voltage* Vcr (sat)* Vae (Ic = 10m
HSS 300M]A | 175] 25 25 | oO} 40 | 100 10M} 0.5 10M 7oM| iT 2n705 |G {P 8-19 | HSS 300M/c | 100) 15 15 | s} 25 LOM} 0.3 10M 2N705A Jc | P HSS 150Mj/A | 100) 15 15} S| 25 10M} 0.3 10M 2N706 |S |N 8-21 | HSS 300M|A | 175{ 25 20 | R| 20 10M] 0.6 10M 200M) T 2N706A 1s [MN 8-21 | HSA 300MIA | 175) 25 20 | RL 20 40 1oM| 0.6 10M 200m) Tt 2N706B |S |N 8-21 | HSS 300MIA | 175] 25 15 | of 20 60 10M] 0.4 10M 200M} 7 2N706C 1S {N | 2N835 8-54 | HSS 360MIA | 200} 40 20 | R| 20 60 1oM| 0.4 10M 200M) T 2N707 |S |N 9-11 | HPA 300M/A } 175] 56 28 | RI9.0 10M] 0.6 10M 2N707A |S |N 9-11 | RFA 500M/A | 175] 70 40 | 0]9.0 50 10M] 0.6 10M 70M 7 2n708 {5S |N 8-23 | HSS 360M/A | 200] 40 20 | R] 30 | 120 10M} 0.4 10M 300M) T| 2N708A |S |N | 2N834 8-54 | HSS 360M|A | 200) 50 30 | R}| 40 | 120 10M] 0.15 10M 300M) TI 2n709 |S |N HSS 300M)A | 2001 15 | 6.0 | Of 20 | 120 10M| 0.3 | 3.0M 600M T 2N709A |S |N HSS 300mM{A | 200] 15 | 6.0 | oO} 30 90 10M} 0.3} 3.0M 800M 17 2n710 }a|P 8-24 | HSS 300mIc | loo] 15 15 | s| 25 lox} 0.
|0-25/120|/630} 2/125] 10} 1000t) TO-18 | BCY78 BC108 30 | 20 200] 0-2 10 |0-5 | 120] 800 2/150] 10 {| 300] TO-18 | BC178 ZT80 25 | 25 500|0.2 10} 2 38/162] 10/200) 10 300 | TO-18 | ZT180 2187 25 | 25 600/0-2 10| 2 75| 250) 10/200) 10 300 | TO-18 | 27187 2N706A | 25 | 20 10-6 10 1 20} 60} 10/200} 10) 300] TO-18 _ 2N706 25 | 20 |0-6 10 1 20} |} 10/200} 10 | 300) TO-18 _ BSY95A | 20 | 15 200/0-35] 10} 06-2 | 50/200] 10/200] 10 |} 300; TO-18 _ TAt Tcase= 45C TO-18 TO-39NPN GENERAL PURPOSE - Continued Max Mex VoE sat) FE at me Prot Type VcsIVceo| Ic at Tamb| Package | Comple- le Ip | Min|Max] Ic le }=25C ment Viv mA Vv mA | mA mA {MHz mA] mW 2N3053 60| 40 700,/1-4 | 150} 15 50| 250; 1501}100; 50 | 1000 | TO39 2N4037 2N696 60] 40 } 500)1-5 150] 15 | 20} 60/150] 80} 50 | 600) TO39 2N1131 2N697 60/ 40 | 500/1-5 150} 15 | 40/120)150/100! 50} 600} TO39 2N1132 BFY51 60| 30 |1000/0-35} 150} 15 } 40} |150] 50} 50] 800) TO39 - BC107 50| 45 200] 0-2 10/0-5 |120]460} 2/150} 10 4 300) 1018 BC177 BCY59 45 | 45 2
FP 800H!* TD 3FP 800R'* 17 17f 17f BC 140. _._..BIW 42... i7e_ BST C0246 Vt S 3703 SF, TU SE 80H, (70 3F 800 H) BSV 89...92, BSX 92,..93, 2N3011, ++ BSV 89...92, BSX 44, BSX 92...93, 2N3011++ BSV 89. .92, BSX 44, BSX 92...93, PN3O11++ BSW 41, BSY 62...63, 2N706A, 2N4123, +4 BSW 41, BSY 62...63, 2N70BA, 2N4123, ++ BSW 41, BSY 62...63, 2N7O6A, 2N4123, +4 BSW 41, BSY 62...63, 2N706A, 2N4123, +4 BSS 27, BSV 77, BSV 95, 2SC1385.,.86, +4 BSV 89.,.92, BSX 44, BSX 92...93, PNBO11+4 -2N743 2N744 2N3250....51, 2N3905...08, 2N4125...26 2N3250....51, 2N3905...06, 2N4125...26 2N1613 >2N1893 2N2193 . BSW 41, BSY 62...63, 2N7O6A, 2N4124, +4 BSV 59, BSX 48, 2N2221...22, 2N3301...0244 BSV 59, BSX 49, 2N2221...22, 2NG3O1...02+4 BSV 89...92, BSX 44, BSX 92...93, 2N30114+ BC 140...141, BC 300...302, =2N6Q, ++ BC 140...141, BC 300...302, =2N1420, ++ BC 140...141, BC 300...301, <2N1613, +4 BC 140...141, BC 300...301, =2N1711, +4 BC 300, BSW 67...68, BSX 47, =2N1893, +4 BG 300, BSW 67...68, BSX 47, 2N1893,
2N706A Si NPN Power HF BJT 2.76 Transistors Bipolar Silicon NPN Power Transistors ... Page 1 of 1 Enter Your Part # Home Part Number: 2N706A Online Store 2N706A Diodes Si NPN Power HF BJT Transistors Enter code INTER3 at checkout.** Integrated Circuits Optoelectronics Thyristors Products Search for Parts In Stock 688 Brand New Available from $ 2.76 Request a Quote Information Manufacturer Partnumber: 2N706A Spec Sheets List Price: $ 3.45 Tutorials Shipping FAQs Our Price: $ 2.76 You Save: $ 0.69 Company Testimonials Americanmicrosemi Total Price $ 2.76 Store Policies Contact Us Quantity to Order: 1 SHOP WITH CONFIDENCE All Parts are Brand New! 100% Secure, SSL Encryption! Ships in 1-2 business days FREE UPS GROUND SHIPPING US48 Submit CUSTOMER TESTIMONIALS 1) AMS had the parts that were very difficult to find! 2) Their price was very reasonable (unlike other vendors). 3) Their low free shipping threshold was much appreciated. 4) Their shopping cart was easil
|0-25/120|/630} 2/125] 10} 1000t) TO-18 | BCY78 BC108 30 | 20 200] 0-2 10 |0-5 | 120] 800 2/150] 10 {| 300] TO-18 | BC178 ZT80 25 | 25 500|0.2 10} 2 38/162] 10/200) 10 300 | TO-18 | ZT180 2187 25 | 25 600/0-2 10| 2 75| 250) 10/200) 10 300 | TO-18 | 27187 2N706A | 25 | 20 10-6 10 1 20} 60} 10/200} 10) 300] TO-18 _ 2N706 25 | 20 |0-6 10 1 20} |} 10/200} 10 | 300) TO-18 _ BSY95A | 20 | 15 200/0-35] 10} 06-2 | 50/200] 10/200] 10 |} 300; TO-18 _ TAt Tcase= 45C TO-18 TO-39 NPN GENERAL PURPOSE - Continued Max Mex VoE sat) FE at me Prot Type VcsIVceo| Ic at Tamb| Package | Comple- le Ip | Min|Max] Ic le }=25C ment Viv mA Vv mA | mA mA {MHz mA] mW 2N3053 60| 40 700,/1-4 | 150} 15 50| 250; 1501}100; 50 | 1000 | TO39 2N4037 2N696 60] 40 } 500)1-5 150] 15 | 20} 60/150] 80} 50 | 600) TO39 2N1131 2N697 60/ 40 | 500/1-5 150} 15 | 40/120)150/100! 50} 600} TO39 2N1132 BFY51 60| 30 |1000/0-35} 150} 15 } 40} |150] 50} 50] 800) TO39 - BC107 50| 45 200] 0-2 10/0-5 |120]460} 2/150} 10 4 300) 1018 BC177 BCY59 45 | 45
2N706A NPN SMALL-SIGNAL TRANSISTOR 1 Emitter MAXIMUM RATINGS RATINGS SYMBOL 2N706A UNITS Collector-Emitter Voltage Vceo 15 Vde Collector-Base Voltage Vog 25 Vdc Emitter-Base Voltage Vex 5.0 Vde Collector Current -- Continuous Ie 50 mAdc Total Power Dissipation @T,=25 C Py 1.0 WwW Derate above 25C 5.7 m/WC Operating & Storage Junction Temperature Range T, Tet -65 to +200 "C MECHANICAL OUTLINE 4.95 0.178 0.185 0 i NEW ENGLAND SEMICONDUCTOR 6 Lake Street 1-800-446-1158 / (978) 794-1666 / FAX: (978) 689-0803 Lawrence, MA 01841 T4-4.8-860-322 REV: --2N706A Gg B PNEW ENGLAND SEMICONDUCTOR ELECTRICAL CHARACTERISTICS (T. = 25C unless otherwise noted) | Characteristics ] Symbol | Min | Max | Unit | OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage I-=10 mAde, Ip= 0 Vceo(eus) 15 Vde Collector Cutoff Current Vcg = 15 Vde, p= 0 Icpo 0.5 pAdc Vp = 25 Vde, Ip =0 10) | HAde Emitter Cutoff Current Vex = 5.0 Vde, I. =0 leno 10 | pAde ON CHARACTERISTICS (1) DC Current Gain Ic = 10
18 Lo1 15V - 3V | 50mA 100C | 300mWF 120M 10P 25mn 10mA VLS | TIS AF106 2N705A PG | TO18 Lot 15V - 3V {50mA 100C | 150mWF 120M 10P 25mn 10mA VLS | OBS | AF106 2N706 NS | TO18 Lo1 25V 20V 3V | 200mA 150C | 300mWF 200M 6PO 20mn 10mA RLS | STM | BSX20 2N2369 2N706A NS | TO18 Lo1 | 25V 15V SV | 200mA 175C | 300mWF 200M 5P0 20/60 10mA RLS | STM | BSX20 2N2369 2N706B NS | TO18 | LO1 | 25V 158V SV | 200mA 175C | 300mWF 200M 5PO 20/60 TOmA RLS | STM | BSX20 2N2369 2N706C NS | TO18 Low 40V 15V 5V | 200mA 200C | 360mWF 200M 5PO 20/60 10mA RLS | OBS | BSX20 2N2369 2N706-46 Ns | TO46 Lo1 | 25V 20V 3V | 200mA 150C | 400mWF 200M 6PO 20mn 10mA RLS | OBS | BSX20 2N2369 2N706-51 NS | OBS OBS | 25V 20N BY 1 200mA SOC | 300mMWE 200M 6Pa 20mn 1OmA RLS | OBS | BSxX20 2N2369 2N706A-46 NS | TO46 Lo1 | 25V 15V 5V | 200mA 175C | 400mWF 200M 5PO 20/60 10mA RLS | OBS | BSX20 2N2369 2N706A-51 NS | OBS OBS | 25V 15V 5V | 200mA 175C | 300mWF 200M 5PO 20/60 10mA RLS | OBS | BSX20 2N2363 2N706B-46 NS |
PG TO18 LOL 15V 3V5 50MA 100C 300MWF 120M | 1LOP 25MN LOMA] VLS|/TIB{ AF106 0 2N705A PG T018 LOL 15V 3V5 50MA 100C 150MWF 120M |; 10P 25MN 1OMA} VLS JOBS} AF106 0 2N706 NS TO18 Lol 25V 20V 3V 200MA 150C 300MWF 200M 6P 20MN LOMA; RLS |SGI| 8SxX20 2N2369 0 2N706A NS TO18 LOL 25V 15V 5V 200MA 175C 3OOMWE 200M 5P 20/60 10MA] RLS|SGI]| BSX20 2N2369 Q 2N706B NS TO18 Ol 25V 15V 5v 200MA 175C 300MWF 200M 5P 20/60 10MA] RLS|SGI] BSX20 2N2369 0 2N706C NS 7018 Lol 40v 15V 5V 200MA 200C 360MWF 200M 5P 20/60 10MA; RLS [OBS| BSX20 2N2369 0 2N706/46 NS T046 LOL 25V 20V 3V 200MA 150C AQOMWF 200M 6P 20MN 10MA/ RLS|OBS| BSX20 2N2369 QO 2N706/51 NS OBS OBS 25V 20V 3V 200MA 1506 30OMWF 200M 6P 20MN 10MA] RLS/OBS| BSX20 2N2369 0 2N706A/46 NS T046 lol 25V 15v 5V 200MA 175C 400MWF 200M 5P 20/60 10MAj RLS]OBS] BSxX20 2N2369 0 2N706A/51 NS OBS OBS 25V 15V 5v 200MA 175 3OOMWF 200M P 20/60 10MA] RLS ]OBS| BSX20 2N2369 0 2N706B/46 NS T046 Lol 25V 15V 5V 200MA 175C AQOMWF 200M 5P 20/60 1OMA] RLS }O
2N706A 2N 753 - Amplification petits signaux Small signal amplification * Dispositif recommand Prefered device Donnes principales Principal features - Commutation rapide faible courant Low current fast switching VcEo 15 V 20-60 2N 706A ho4E (10 mA) 40 - 120 2N 753 Dissipation de puissance maximale f 200 MHz min Maximum power dissipation T . Pro ww O8 06 0.4 (1) 0,2 tamb(C) (1) 50 100 150 200 tcase(C)(2) Boitier TO-18 Case cCJe # Le collecteur est reli au boitier. Collector is connected to case. Valeurs limites absolues d'utilisation 4 tamb= 25C oo, ; Absolute ratings (limiting values) Sau i ndications Gontraires Paramitre BA : : oe 2N 76 NTS | Tension collecteur-base Collector-base voltage VeBo 25 25 Vv Tension collecteur-metteur R = 1 v Collector-emitter voltage BE 9a CER 20 20 Vv Tension collecteur-metteur Vv Collector-emitter voltage CEO 15 15 v Tension metteur-base Vv Emitter-base voltage EBO 5 5 Vv Courant collecteur Collector current Io 50 mA Dissipation de puissance tamb = 25C (1) Prot 0,3
|0-25/120|/630} 2/125] 10} 1000t) TO-18 | BCY78 BC108 30 | 20 200] 0-2 10 |0-5 | 120] 800 2/150] 10 {| 300] TO-18 | BC178 ZT80 25 | 25 500|0.2 10} 2 38/162] 10/200) 10 300 | TO-18 | ZT180 2187 25 | 25 600/0-2 10| 2 75| 250) 10/200) 10 300 | TO-18 | 27187 2N706A | 25 | 20 10-6 10 1 20} 60} 10/200} 10) 300] TO-18 _ 2N706 25 | 20 |0-6 10 1 20} |} 10/200} 10 | 300) TO-18 _ BSY95A | 20 | 15 200/0-35] 10} 06-2 | 50/200] 10/200] 10 |} 300; TO-18 _ TAt Tcase= 45C TO-18 TO-39 NPN GENERAL PURPOSE - Continued Max Mex VoE sat) FE at me Prot Type VcsIVceo| Ic at Tamb| Package | Comple- le Ip | Min|Max] Ic le }=25C ment Viv mA Vv mA | mA mA {MHz mA] mW 2N3053 60| 40 700,/1-4 | 150} 15 50| 250; 1501}100; 50 | 1000 | TO39 2N4037 2N696 60] 40 } 500)1-5 150] 15 | 20} 60/150] 80} 50 | 600) TO39 2N1131 2N697 60/ 40 | 500/1-5 150} 15 | 40/120)150/100! 50} 600} TO39 2N1132 BFY51 60| 30 |1000/0-35} 150} 15 } 40} |150] 50} 50] 800) TO39 - BC107 50| 45 200] 0-2 10/0-5 |120]460} 2/150} 10 4 300) 1018 BC177 BCY59 45 | 45
version of 2N014. 10 10 | 10 10 10 100 15 Lonss3 30-120 2 15 5 0.85 0.4 25 5 40 | 70 Kovar tab version of 2N706. . a. . oe . [. , Kovar tab version of 2N706. coo 10 1.0 10. 10 10 100 15 i | 108555 | 20 Min. 20 15 a 0.9 0.6 30 | | ~- | Kovar tab version of 2N706A. 0 1.0 10 10 10 100 15 i 1OB556 20-60 0 15 3 0.9 0.6 30 | 40 | 75 | Kovar tab version of 2N708. Ceramic Tab (See Outline No. 18.2) 10, 10 10 10 =} 10 Ti00 T 45 HOBIOS1 30-120 20 ! 1s: 5) 0.85 0.25 25 45 50 | 6 10 | Ceramic tab version of 2N914. 10 10 10 10 10 100 15 1081055] 20 Min, 20 15 3 0.9 0.6 30 - | | Ceramic tab version of 2N706A. 10 10 10 10 10 10 | 0 loGt051 20-60 40 15 45 0.85 0.25 30 12 ei 4 5. | Ceramic tab version of 2N2368. 0 10 | 10 10 10 10 20 1loGtas2 40-120 1 40 15 AS 0.85, 0.25 30 12 18 4 5 Ceramic tab version of 2N2369, NOTES: Test Conditions in Italics. Typical f, for all types = 130 Mc. (2) Storage temperature on all types is 65 to +300C. Operating junction temperature on all types is 65 to + 200C, ) For
urrent: 13 RDS(on) Ohm: 74m Trans Conductance Mhos: 8.0 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID: Case Style: TO-218 Polarity: Industry Type: 2N7067 STI Type: 2N706A Notes: Polarity: NPN Power Dissipation: .3 VCBO: 20 VCER: ICBO: ICBO ua: hFE: 20 hFE A: 10M VCE: VBE: IC A: COB: 5 fT: 200 Case Style: TO-206AA/TO-18 Industry Type: 2N706A STI Type: 2N706B Notes: Polarity: NPN Power Dissipation: 1.0 Tj: VCBO: VCEO: 15 hFE min: hFE max: hFE A: VCE: VCE A: hfe: fT: Case Style: TO-206AA/TO-18: Industry Type: 2N706B STI Type: 2N708 Notes: Polarity: NPN Power Dissipation: .36 VCBO: 15 VCER: ICBO: ICBO ua: hFE: 30 hFE A: 10M VCE: VBE: IC A: COB: 6 fT: 300 Case Style: TO-206AA/TO-18 Industry Type: 2N708 STI Type: 2N711A Notes: Polarity: PNP Power Dissipation: 150m Tj: VCBO: VCEO: 7.0 hFE min: hFE max: hFE A: VCE: VCE A: hfe: fT: Case Style: TO-206AA/TO-18: Industry Type: 2N711A STI Type: 2N711 Notes
- - - .17 .154 .14 .127 610-MPSA28 MPSA28 TO-92 10000 - - - 125 .21 .189 .175 .154 610-2N6427 2N6427 TO-92 14000140000 130 .23 .14 610-2N6426 2N6426 TO-92 20000 200000 - - - .25 .197 .147 .119 610-MPSA14 MPSA14 TO-92 20000 - - - 125 .18 .105 .098 .091 610-2N706A 2N706A TO-18 - - - - - - - - - .74 .687 .603 .561 250 .21 .168 .127 .351 .315 .302 .154 .14 .127 .098 .091 .098 .084 PNP Small Signal Transistors 610-2N4208 2N4208 TO-1830 120 700 1.30 1.26 1.21 1.15 610-2N4234 2N4234 TO-3930 150 31.15 1.04 610-2N5322 2N5322 TO-3930 150 501.51 1.33 1.27 1.21 .923 .855 610-PN3640 PN3640 TO-9230 120 500.39 .351 .309 .287 610-2N3703 2N3703 TO-9230 150 100.20 .168 .154 .14 610-2N5226 2N5226 TO-9230 600 50 .15 .14 610-2N2904A 2N2904A TO-3940 120 200.63 .617 .589 .568 610-2N4030 2N4030 TO-3940 120 100.63 610-2N5400 2N5400 TO-9240 180 100- 610-MPSA70 MPSA70 TO-9240 400 125.24 610-2N3250 2N3250 TO-1850 150 250 1.42 1.39 1.29 1.21 610-2N3905 2N3905 TO-9250 150 200.15 .133 .127 .112 610-MPS6562 MPS6562